NPN Silicon Power Transistor

1kV SWITCHMODE Series

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.

Features:

• Collector–Emitter Voltage — VCEV = 1000 Vdc

• Fast Turn–Off Times

80 ns Inductive Fall Time — 100°C (Typ)

120 ns Inductive Crossover Time — 100°C (Typ)

800 ns Inductive Storage Time — 100°C (Typ)

• 100°C Performance Specified for:

Reverse–Biased SOA with Inductive Load

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

• Extended FBSOA Rating Using Ultra–fast Rectifiers

• Extremely High RBSOA Capability

Typical Applications:

• Switching Regulators

• Inverters

• Solenoids

• Relay Drivers

• Motor Controls

• Deflection Circuits