RF Power Field Effect Transistors

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 V

Lateral N-Channel Broadband RF Power MOSFET, 470 MHz, 70 W, 12.5 V

RF Power Field Effect Transistors

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封装/外壳：TO-272-8 包装：托盘 描述：FET RF 40V 470MHZ TO272-8 分立半导体产品 晶体管 - FET，MOSFET - 射频

470 MHz, 70 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

5-bit DAC, Synchronous PWM Power Regulator with LDO and Linear Controller

DESCRIPTION The AIC1570 combines a synchronous voltage mode controller with a low dropout linear regulator and a linear controller as well as the monitoring and protection functions in this chip. The PWM controller regulates the microprocessor core voltage with a synchronous rectified buck conver

5-bit DAC, Synchronous PWM Power Regulator with LDO and Linear Controller

DESCRIPTION The AIC1570 combines a synchronous voltage mode controller with a low dropout linear regulator and a linear controller as well as the monitoring and protection functions in this chip. The PWM controller regulates the microprocessor core voltage with a synchronous rectified buck conver

Half-size NS Geode GX1-300 Low Power ISA-bus CPU Card with VGA/LCD, LAN, DOC

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Balance Filter

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Balance Filter

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