MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

Linear RF Power MOSFET 600W, to 80MHz

Designed primarily for linear large signal output stages to 80 MHz. • Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 21 dB (typ.) Efficiency = 45 (typ.)

TMOS

Designed primarily for linear large signal output stages to 80 MHz. ·Specified 50 volts, 30 MHz characteristics\n·Efficiency = 45% (typ.)\n·Power gain = 21 dB (typ.)\n·Output power = 600 watts;

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

MOS LINEAR RF POWER FET

Linear RF Power MOSFET 600W, to 80MHz

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封装/外壳：368-03 包装：散装 描述：FET RF 125V 80MHZ 368-03 1=1PC 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 V

RF Power Field Effect Transistors

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 V

Linear RF Power MOSFET

文件：327.06 Kbytes Page：9 Pages

Linear RF Power MOSFET

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RF Power Field Effect Transistors

文件：620.83 Kbytes Page：23 Pages

RF Power Field Effect Transistors

文件：620.83 Kbytes Page：23 Pages

RF Power Field Effect Transistors

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RF Power Field Effect Transistors

文件：620.83 Kbytes Page：23 Pages

封装/外壳：TO-272-8 包装：卷带（TR） 描述：FET RF 40V 470MHZ TO272-8 WRAP 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

文件：620.83 Kbytes Page：23 Pages

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 400 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MI

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre