Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 50 W, 12.5 V

封装/外壳：TO-272BA 包装：散装 描述：FET RF 40V 175MHZ TO272-6 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors

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RF Power Field Effect Transistors

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Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 24 (7/32) AWG Tinned Copper 0.024 b) Insulation 0.016 Wall, Nom. PVC 0.056+/- 0.002 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, SLATE, VIOLET, WHITE/BLACK, WHITE/RED WHITE/GREEN, WHITE/YELLOW, WHITE/BLUE WHITE

.187˝ Diameter Ground Pins – Female

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Switching DC Power Supply with USB Charger

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USB charging port on front panel

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Customer Specification

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