N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

Broadband RF Power MOSFET Broadband RF Power MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. N–Channel enhancement mode MOSFET • Specified 50 volts, 30 MHz characteristics Output power = 600 watts Power gain = 17 dB (typ.) Efficiency = 45 (typ.)

600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET

Broadband RF Power MOSFET 600W, to 80MHz, 50V

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. ·N–Channel enhancement mode MOSFET\n·Specified 50 volts, 30 MHz Characteristics -Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.);

封装/外壳：368-03 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 125V 100MHZ 368-03 分立半导体产品 晶体管 - FET，MOSFET - 射频

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Transistor

Broadband RF Power MOSFET 600W, to 80MHz, 50V

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Broadband RF Power MOSFET

文件：293.84 Kbytes Page：9 Pages

Broadband RF Power MOSFET

文件：735.96 Kbytes Page：10 Pages

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

Silicon NPN Transistor High Voltage Video Output

Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: • High Voltage: VCEO = 300V Min @ IC = 5mA • Low Capacitance: Cob = 3pF Max @ VCB = 20V • High Frequency: ft = 50MHz Min @ IC = 15mA • H

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th