RF Power Field Effect Transistors

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520 MHz，35 W，12.5 V宽带射频功率LDMOS

封装/外壳：TO-272AA 包装：托盘 描述：FET RF 40V 520MHZ TO272-6 WRAP 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors

文件：708.91 Kbytes Page：19 Pages

RF Power Field Effect Transistors

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RF Power Field Effect Transistors

文件：486.47 Kbytes Page：14 Pages

RF Power Field Effect Transistors

文件：486.47 Kbytes Page：14 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：662.89 Kbytes Page：19 Pages

RF Power Field Effect Transistors

文件：708.91 Kbytes Page：19 Pages

HIGH CONTACT CAPACITY, PRECISE OPERATION

AM1 (NZ) SWITCHES FEATURES • 10 A Current switching capacity • High precision and long life • Versatile variety of actuators • Screw terminal types can be used with M4 crimp terminals TYPICAL APPLICATIONS • Transfer machine • Packing machine • Textile equipment • Cutting machine • Foot

CK ROTARY SWITCH

FEATURES Standard 30° indexing, 60° and 90° available Moulded 27.5mm diameter Single wafer switch Maximum 12 positions Up to 4 poles per switch Shorting (make before break 30° indexing only) or non-shorting (break before make) Moulded stop or adjustable stops to restrict number of posit

SCREW TERMINALS

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Low rDS(on) provides higher efficiency and extends battery life

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GENERAL ELECTRICAL & MECHANICAL SPECIFICATION

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