Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

Power Transistors

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types

90W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Transistor

isc Silicon NPN Darlington Power Transistor

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COMPLEMENTARY POWER DARLINGTONS

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Silicon NPN Power Transistors

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NPN Silicon Power Darlington Transistor

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

NPN Silicon Power Darlington Transistor

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage,high current • DARLINGTON APPLICATIONS • Automotive ignition • Switching regulator • Motor control applications

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage,high current • DARLINGTON APPLICATIONS • Automotive ignition • Switching regulator • Motor control applications

POWER TRANSISTORS(10A,400V,175W)

The MJ10012 are high-voltage, high current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

POWER TRANSISTORS DARLINGTON NPN SILICON

NPN Silicon Power Darlington Transistor TheMJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage — VCEO(sus)= 400 Vdc (Min) • 175

10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

NPN SILICON POWER DARLINGTON TRANSISTORS

The MJ10012 are high-voltage, high current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

POWER TRANSISTORS(10A,550-600V,175W)

10 AMPERE POWER DARLINGTON TRANSISTORS 550-600 VOLTS 175 WATTS

10 AMPERE POWER DARLINGTON TRANSISTORS

10 AMPERE POWERDARLINGTON TRANSISTORS 55O-600 VOLTS 175 WATTS

10 AMPERE POWER DARLINGTON TRANSISTORS

10 AMPERE POWERDARLINGTON TRANSISTORS 55O-600 VOLTS 175 WATTS

POWER TRANSISTORS(10A,550-600V,175W)

10 AMPERE POWER DARLINGTON TRANSISTORS 550-600 VOLTS 175 WATTS

POWER TRANSISTORS(50A,400-500V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

POWER TRANSISTORS(50A,400-500V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

DARLINGTON POWER TRANSISTOR

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Silicon NPN Power Transistors

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isc Silicon NPN Darlington Power Transistor

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NPN SILICON POWER DARLINGTON TRANSISTORS

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isc Silicon NPN Darlington Power Transistor

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NPN SILICON POWER DARLINGTON TRANSISTORS

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包装：卷带（TR） 描述：RESISTOR AXIAL 电阻器 通孔式电阻器

封装/外壳：轴向 包装：带盒（TB） 描述：RES 1K OHM 1% 1/8W AXIAL 电阻器 通孔式电阻器

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

10-Bit P Compatible A/D Converter

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10-Bit P Compatible A/D Converter

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