MJ1001晶体管资料

  • MJ1001别名:MJ1001三极管、MJ1001晶体管、MJ1001晶体三极管

  • MJ1001生产厂家:美国摩托罗拉半导体公司

  • MJ1001制作材料:Si-N+Darl+Di

  • MJ1001性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • MJ1001封装形式:直插封装

  • MJ1001极限工作电压:80V

  • MJ1001最大电流允许值:8A

  • MJ1001最大工作频率:<1MHZ或未知

  • MJ1001引脚数:2

  • MJ1001最大耗散功率:90W

  • MJ1001放大倍数:β>1000

  • MJ1001图片代号:E-44

  • MJ1001vtest:80

  • MJ1001htest:999900

  • MJ1001atest:8

  • MJ1001wtest:90

  • MJ1001代换 MJ1001用什么型号代替:BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3001,2N6056,

MJ1001价格

参考价格:¥78.3481

型号:MJ10016 品牌:NTE Electronics 备注:这里有MJ1001多少钱,2024年最近7天走势,今日出价,今日竞价,MJ1001批发/采购报价,MJ1001行情走势销售排行榜,MJ1001报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJ1001

Medium-PowerComplementarySiliconTransistors

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=6000(Typ)@IC=3.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJ1001

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJ1001

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeMJ900/901 APPLICATIONS ·Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
MJ1001

COMPLEMENTARYPOWERDARLINGTONS

TheMJ900,MJ901,MJ1000andMJ1001aresiliconepitaxial-bastransistorsinmonolithic Darlingtonconfiguration,andaremountedinJEDECTO-3metalcase. Theyareintendedforuseinpowerlinearandswitchingapplications. TheircomplementaryNPNtypesaretheMJ1000andMJ1001respectively.

COMSET

Comset Semiconductor

COMSET
MJ1001

COMPLEMENTARYPOWERDARLINGTONS

TheMJ900,MJ901,MJ1000andMJ1001aresiliconepitaxial-bastransistorsinmonolithicDarlingtonconfiguration,andaremountedinJEDECTO-3metalcase.Theyareintendedforuseinpowerlinearandswitchingapplications. PNPtypesaretheMJ900andMJ901,andtheircomplementaryNPNtypes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJ1001

COMPLEMENTARYPOWERDARLINGTONS

文件:78.25 Kbytes Page:3 Pages

COMSET

Comset Semiconductor

COMSET
MJ1001

SiliconNPNPowerTransistors

文件:120.39 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
MJ1001

iscSiliconNPNDarlingtonPowerTransistor

文件:74.35 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

10AMPEREPOWERTRANSISTORSDARLINGTONNPNSILICON400VOLTS175AND118WATTS

TheMJ10012andMJH10012arehigh-voltage,high-currentDarlingtontransistorsdesignedforautomotiveignition,switchingregulatorandmotorcontrolapplications. •Collector-EmitterSustainingVoltage—VcEO(sus)=400Vdc(Min) •175WattsCapabilityat50Volts •AutomotiveFunctionalTest

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPNSILICONPOWERDARLINGTONTRANSISTORS

TheMJ10012arehigh-voltage,highcurrentDarlingtontransistorsdesignedforautomotiveignition,switchingregulatorandmotorcontrolapplications.

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

POWERTRANSISTORSDARLINGTONNPNSILICON

NPNSiliconPowerDarlingtonTransistor TheMJ10012andMJH10012arehigh–voltage,high–currentDarlingtontransistorsdesignedforautomotiveignition,switchingregulatorandmotorcontrolapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=400Vdc(Min) •175

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS(10A,400V,175W)

TheMJ10012arehigh-voltage,highcurrentDarlingtontransistorsdesignedforautomotiveignition,switchingregulatorandmotorcontrolapplications.

MOSPEC

MOSPEC

MOSPEC

NPNSiliconPowerDarlingtonTransistor

TheMJ10012andMJH10012arehigh-voltage,high-currentDarlingtontransistorsdesignedforautomotiveignition,switchingregulatorandmotorcontrolapplications. •Collector-EmitterSustainingVoltage—VcEO(sus)=400Vdc(Min) •175WattsCapabilityat50Volts •AutomotiveFunctionalTest

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNSiliconPowerDarlingtonTransistor

TheMJ10012andMJH10012arehigh-voltage,high-currentDarlingtontransistorsdesignedforautomotiveignition,switchingregulatorandmotorcontrolapplications. •Collector-EmitterSustainingVoltage—VcEO(sus)=400Vdc(Min) •175WattsCapabilityat50Volts •AutomotiveFunctionalTest

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highcurrent •DARLINGTON APPLICATIONS •Automotiveignition •Switchingregulator •Motorcontrolapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

NPNSILICONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •Highvoltage,highcurrent •DARLINGTON APPLICATIONS •Automotiveignition •Switchingregulator •Motorcontrolapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

10AMPEREPOWERDARLINGTONTRANSISTORS

10AMPEREPOWERDARLINGTONTRANSISTORS55O-600VOLTS175WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORS(10A,550-600V,175W)

10AMPEREPOWERDARLINGTONTRANSISTORS550-600VOLTS175WATTS

MOSPEC

MOSPEC

MOSPEC

POWERTRANSISTORS(10A,550-600V,175W)

10AMPEREPOWERDARLINGTONTRANSISTORS550-600VOLTS175WATTS

MOSPEC

MOSPEC

MOSPEC

10AMPEREPOWERDARLINGTONTRANSISTORS

10AMPEREPOWERDARLINGTONTRANSISTORS55O-600VOLTS175WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTORS(50A,400-500V,250W)

SWITCHMODESERIESNPNSILICONPOWERDARLINGTONTRANSISTORSWITHBASE-EMITTERSPEEDUPDIODE TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

MOSPEC

MOSPEC

MOSPEC

NPNSILICONPOWERDARLINGTONTRANSISTORS

SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

50AMPERENPNSILICONPOWERDARLINGTONTRANSISTORS400AND500VOLTS250WATTS

SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

MotorolaMotorola, Inc

摩托罗拉

Motorola

50AMPERENPNSILICONPOWERDARLINGTONTRANSISTORS400AND500VOLTS250WATTS

SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPNSILICONPOWERDARLINGTONTRANSISTORS

SWITCHMODESeriesNPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS(50A,400-500V,250W)

SWITCHMODESERIESNPNSILICONPOWERDARLINGTONTRANSISTORSWITHBASE-EMITTERSPEEDUPDIODE TheMJ10015andMJ10016Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedsw

MOSPEC

MOSPEC

MOSPEC

DARLINGTONPOWERTRANSISTOR

文件:86.03 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:112.59 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconNPNDarlingtonPowerTransistor

文件:243.44 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERDARLINGTONTRANSISTORS

文件:71.05 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNSILICONPOWERDARLINGTONTRANSISTORS

文件:71.05 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNDarlingtonPowerTransistor

文件:284.9 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

包装:卷带(TR) 描述:RESISTOR AXIAL 电阻器 通孔式电阻器

OHMITE

OHMITE MANUFACTURING COMPANY

OHMITE

封装/外壳:轴向 包装:带盒(TB) 描述:RES 1K OHM 1% 1/8W AXIAL 电阻器 通孔式电阻器

OHMITE

OHMITE MANUFACTURING COMPANY

OHMITE

IECApplianceInletC14,Screw-onMounting,RearSide,PCBTerminal

Description -PanelMount:Screw-onfromrearside -ApplianceInlet,Pintemperature70°C,ProtectionclassI -ForPCBmounting

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

PulseTransformers

DESCRIPTION The1000seriesareintendedforwidebandandpulseoperations.Theyarealsosuitableforsignalisolationandsmallisolatedpowersupplies.Thecompactfootprintmakesthemidealforapplicationswherespaceisatapremium. FEATURES ■UL94V-0PackageMaterial ■Isolationto2k

CANDD

C&D Technologies

CANDD

WILMAR??ProtectiveRelays-1000Series

Phasefailurerelaysprotectmotors,equipmentandpersonnelfromdamageorinjurycausedbyopenphase,reversedphasesequence,orlowvoltageinathreephasesystem.Modelsareavailablefor50and60Hzwithvoltagesupto575volts.Motorcontrolswitchboardsareacommonapplication. Opera

MACOM

Tyco Electronics

MACOM

PulseTransformers

文件:109.19 Kbytes Page:2 Pages

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

MuRata

OutgassingCompliantCurrentSensors

文件:238.56 Kbytes Page:2 Pages

COILCRAFTCoilcraft

线艺

COILCRAFT

MJ1001产品属性

  • 类型

    描述

  • 型号

    MJ1001

  • 制造商

    Motorola Inc

更新时间:2024-4-27 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MJ10012
60
60
CENTRAL-中环
24+25+/26+27+
TO-3-2
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
MOT
1116+
DC83PACKAGET
6869
绝对原装现货
MOTO/ON
1635+
6000
好渠道!好价格!一片起卖!
ON
TO-3
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ON/安森美
22+
TO-3
17368
MOTOROLA/摩托罗拉
24+
TO-3
990000
明嘉莱只做原装正品现货
26
全新原装 货期两周
MOTOROLA/摩托罗拉
2102+
TO-2P
6854
只做原厂原装正品假一赔十!
MOTOROLA
23+
DIP
4500
全新原装、诚信经营、公司现货销售!

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