Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types

90W NPN Darlington BJT Transistor

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Transistor

COMPLEMENTARY POWER DARLINGTONS

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Silicon NPN Power Transistors

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isc Silicon NPN Darlington Power Transistor

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Power Transistors

Power Transistors TO-3 Case (Continued)

10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

NPN SILICON POWER DARLINGTON TRANSISTORS

The MJ10012 are high-voltage, high current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

POWER TRANSISTORS DARLINGTON NPN SILICON

NPN Silicon Power Darlington Transistor TheMJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage — VCEO(sus)= 400 Vdc (Min) • 175

POWER TRANSISTORS(10A,400V,175W)

The MJ10012 are high-voltage, high current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

NPN Silicon Power Darlington Transistor

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

NPN Silicon Power Darlington Transistor

The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. • Collector-Emitter Sustaining Voltage — VcEO(sus) = 400 Vdc (Min) • 175 Watts Capability at 50 Volts • Automotive Functional Test

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage,high current • DARLINGTON APPLICATIONS • Automotive ignition • Switching regulator • Motor control applications

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High voltage,high current • DARLINGTON APPLICATIONS • Automotive ignition • Switching regulator • Motor control applications

10 AMPERE POWER DARLINGTON TRANSISTORS

10 AMPERE POWERDARLINGTON TRANSISTORS 55O-600 VOLTS 175 WATTS

POWER TRANSISTORS(10A,550-600V,175W)

10 AMPERE POWER DARLINGTON TRANSISTORS 550-600 VOLTS 175 WATTS

POWER TRANSISTORS(10A,550-600V,175W)

10 AMPERE POWER DARLINGTON TRANSISTORS 550-600 VOLTS 175 WATTS

10 AMPERE POWER DARLINGTON TRANSISTORS

10 AMPERE POWERDARLINGTON TRANSISTORS 55O-600 VOLTS 175 WATTS

POWER TRANSISTORS(50A,400-500V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

POWER TRANSISTORS(50A,400-500V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

DARLINGTON POWER TRANSISTOR

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Silicon NPN Power Transistors

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isc Silicon NPN Darlington Power Transistor

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NPN SILICON POWER DARLINGTON TRANSISTORS

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NPN SILICON POWER DARLINGTON TRANSISTORS

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isc Silicon NPN Darlington Power Transistor

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包装：卷带（TR） 描述：RESISTOR AXIAL 电阻器 通孔式电阻器

封装/外壳：轴向 包装：带盒（TB） 描述：RES 1K OHM 1% 1/8W AXIAL 电阻器 通孔式电阻器

IEC Appliance Inlet C14, Screw-on Mounting, Rear Side, PCB Terminal

Description - Panel Mount: Screw-on from rear side - Appliance Inlet, Pin temperature 70 °C, Protection class I - For PCB mounting

Pulse Transformers

DESCRIPTION The 1000 series are intended for wideband and pulse operations. They are also suitable for signal isolation and small isolated power supplies. The compact footprint makes them ideal for applications where space is at a premium. FEATURES ■ UL 94V-0 Package Material ■ Isolation to 2k

WILMAR??Protective Relays - 1000 Series

Phase failure relays protect motors, equipment and personnel from damage or injury caused by open phase, reversed phase sequence, or low voltage in a three phase system. Models are available for 50 and 60 Hz with voltages up to 575 volts. Motor control switchboards are a common application. Opera

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

Pulse Transformers

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