N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co

100V N-Channel Enhancement Mode MOSFET

Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON)

100V N-Channel Enhancement Mode MOSFET

Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on)

N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co

N-Channel MOSFET uses advanced trench technology

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