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STD15NF10价格
参考价格：￥3.0852
型号：STD15NF10T4 品牌：STMicroelectronics 备注：这里有STD15NF10多少钱，2025年最近7天走势，今日出价，今日竞价，STD15NF10批发/采购报价，STD15NF10行情走势销售排行榜，STD15NF10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD15NF10 | N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co | STMICROELECTRONICS 意法半导体 |   | |
STD15NF10 | 100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON) | UMW 友台半导体 | | |
STD15NF10 | 100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on) | EVVOSEMI 翊欧 | | |
STD15NF10 | N-Channel MOSFET uses advanced trench technology 文件：1.56275 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on) | EVVOSEMI 翊欧 | | ||
100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON) | UMW 友台半导体 | | ||
N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co | STMICROELECTRONICS 意法半导体 | | ||
Isc N-Channel MOSFET Transistor 文件：320.54 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N沟道100 V、0.06 Ohm典型值、23 A STripFET II功率MOSFET，DPAK封装 | STMICROELECTRONICS 意法半导体 | | ||
N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co | STMICROELECTRONICS 意法半导体 | |
STD15NF10产品属性
- 类型
描述
- 型号
STD15NF10
- 制造商
STMicroelectronics
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
15+ |
原厂原装 |
5000 |
进口原装现货假一赔十 |
|||
ST |
21+ |
TO-252 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法半导体 |
2023+ |
TO-252-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
友台 |
23+ |
TO-252 |
16000 |
优势原装现货假一赔十 |
|||
ST/意法 |
24+ |
TO-252-3 |
5000 |
只做原装，欢迎询价，量大价优 |
|||
友台UMW |
25+ |
DIP |
2500 |
国产替换现货降本 |
|||
ST |
TO-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
ST/意法半导体 |
25 |
TO-252-3 |
6000 |
原装正品 |
|||
ST |
NEW |
TO-252 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
NK/南科功率 |
2025+ |
TO-252-2 |
986966 |
国产 |
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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