EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550S.

General Purpose Transistor, SOT-23, 25V, 1.5A

• Complementary to MPS8550S;

General Purpose Transistor, SOT-23(1), 25V, 1.2A

• Complementary to MPS8550SC;

EPITAXIAL PLANAR NPN TRANSISTOR

HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550SC.

EPITAXIAL PLANAR NPN TRANSISTOR

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6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

1.5A MOTOR DRIVER WITH BRAKE FUNCTION

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QPSK transmitter

文件：125.43 Kbytes Page：28 Pages

TDA8046H

文件：127.21 Kbytes Page：24 Pages