MPS290价格

参考价格:¥0.4148

型号:MPS2907AG 品牌:ON 备注:这里有MPS290多少钱,2026年最近7天走势,今日出价,今日竞价,MPS290批发/采购报价,MPS290行情走势销售排行榜,MPS290报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MPS290

Fixecd PLL synthesizer

文件:231 Kbytes Page:3 Pages

BOWEI

博威集成电路

丝印代码:MPS2907AZ;TO-92 Plastic-Encapsulate Transistors

DGNJDZ

南晶电子

丝印代码:MPS2907AZ;TO-92 Plastic-Encapsulate Transistors

DGNJDZ

南晶电子

丝印代码:MPS2907;Plastic-Encapsulate Transistors

FEATURES Complementary NPN Type available (MPS2222R )

GWSEMI

唯圣电子

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary NPN Type available (MPS2222)

JIANGSU

长电科技

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors

CDIL

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

MCC

PNP (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR • Collector-Eitter Voltage: VCEO =40V • Collector Dissipation: Pc(max) =625mW

SAMSUNG

三星

General Purpose Transistors

General Purpose Transistors PNP Silicon

MOTOROLA

摩托罗拉

PNP (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR • Collector-Eitter Voltage: VCEO =60V • Collector Dissipation: Pc(max) =625mW

SAMSUNG

三星

PNP General Purpose Transistors

PNP General Purpose Transistors

WEITRON

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Transistors

TEL

SMALL SIGNAL TRANSISTORS (PNP)

FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available in the SOT-23 case with the type designation MMBT2907A.

GE

TO-92 PLASTIC ENCAPSULATE TRANSISTORS

FEATURES Power dissipation PCM: 0.625W (Tamb=25°C) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range Tj, Tstg: -55°C to +150°C

ETCList of Unclassifed Manufacturers

未分类制造商

PNP General Purpose Transistors

PNP General Purpose Transistors

WEITRON

General Purpose Transistors

General Purpose Transistors PNP Silicon

MOTOROLA

摩托罗拉

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

MCC

General Purpose Transistor

FEATURES . Epitaxial Planar Die Construction . Complementary NPN Type Available (MPS2222A) . Ideal for Medium Power Amplification and Switching

SECOS

喜可士

PNP EPITAXIAL PLANAR TRANSISTOR

Description The MPS2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage. • High Speed Switching. • For Complementary Use with NPN Type MPS2222A.

TGS

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Complementary NPN Type available (MPS2222A)

DAYA

大亚电器

PNP (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR • Collector-Eitter Voltage: VCEO =60V • Collector Dissipation: Pc(max) =625mW

SAMSUNG

三星

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

Complementary NPN Type available

FEATURES Complementary NPN Type available (MPS2222A)

FS

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary NPN Type available (MPS2222A)

JIANGSU

长电科技

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors

CDIL

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

MCC

Transistor

ETC

知名厂家

中等功率双极型晶体管

MCC

晶体管

JSCJ

长晶科技

General Purpose Transistors(PNP Silicon)

文件:115.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

文件:115.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors

文件:134.69 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

文件:53.1 Kbytes Page:1 Pages

ALLIED

PNP EPITAXIAL PLANAR TRANSISTOR

文件:51.16 Kbytes Page:3 Pages

TGS

General Purpose Transistors

文件:134.69 Kbytes Page:6 Pages

ONSEMI

安森美半导体

General Purpose Transistor

文件:191.63 Kbytes Page:5 Pages

SECOS

喜可士

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:带盒(TB) 描述:TRANS PNP 60V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

封装/外壳:TO-226-3,TO-92-3 长体 包装:带盒(TB) 描述:TRANS PNP 60V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

General Purpose Transistors

文件:134.69 Kbytes Page:6 Pages

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

文件:287.68 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:287.68 Kbytes Page:2 Pages

MCC

General Purpose Transistors

文件:134.69 Kbytes Page:6 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

文件:115.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors

文件:134.69 Kbytes Page:6 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

文件:115.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

文件:115.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(PNP Silicon)

文件:115.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors

文件:134.69 Kbytes Page:6 Pages

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

文件:287.68 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:287.68 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:287.68 Kbytes Page:2 Pages

MCC

Fixed frequency synthesizer (integrated TCXO)

文件:104.91 Kbytes Page:1 Pages

BOWEI

博威集成电路

Fixed frequency phase locked synthesizer

文件:98.37 Kbytes Page:1 Pages

BOWEI

博威集成电路

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

PHILIPS

飞利浦

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

NTE

MPS290产品属性

  • 类型

    描述

  • 型号

    MPS290

  • 制造商

    BOWEI

  • 制造商全称

    BOWEI

  • 功能描述

    Fixecd PLL synthesizer

更新时间:2026-3-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
17048
全新原装正品/价格优惠/质量保障
ONSEMI/安森美
2026+
TO92
54648
百分百原装现货 实单必成 欢迎询价
长电
24+
TO-92
41000
全新原装正品现货/长期大量供货!!
ON/安森美
24+
TO92
990000
明嘉莱只做原装正品现货
长电/长晶
2021
TO-92
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CJ
23+
TO-92
8560
受权代理!全新原装现货特价热卖!
N/A
25+
TO-92
30000
代理全新原装现货,价格优势
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
CJ
17+
TO-92
60000
保证进口原装可开17%增值税发票
CJ
25+
TO-92
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可

MPS290数据表相关新闻