PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

General Purpose Transistor

FEATURES . Epitaxial Planar Die Construction . Complementary NPN Type Available (MPS2222A) . Ideal for Medium Power Amplification and Switching

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary NPN Type available (MPS2222A)

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Complementary NPN Type available

FEATURES Complementary NPN Type available (MPS2222A)

TO-92 Plastic-Encapsulate Transistors

General Purpose Transistors

General Purpose Transistors PNP Silicon

PNP (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR • Collector-Eitter Voltage: VCEO =60V • Collector Dissipation: Pc(max) =625mW

SMALL SIGNAL TRANSISTORS (PNP)

FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available in the SOT-23 case with the type designation MMBT2907A.

TO-92 PLASTIC ENCAPSULATE TRANSISTORS

FEATURES Power dissipation PCM: 0.625W (Tamb=25°C) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range Tj, Tstg: -55°C to +150°C

PNP General Purpose Transistors

PNP General Purpose Transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Complementary NPN Type available (MPS2222A)

PNP EPITAXIAL PLANAR TRANSISTOR

Description The MPS2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage. • High Speed Switching. • For Complementary Use with NPN Type MPS2222A.

General Purpose Transistors(PNP Silicon)

文件：115.46 Kbytes Page：8 Pages

Small Signal Transistor

中等功率双极型晶体管

晶体管

Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

文件：53.1 Kbytes Page：1 Pages

General Purpose Transistors

文件：134.69 Kbytes Page：6 Pages

PNP EPITAXIAL PLANAR TRANSISTOR

文件：51.16 Kbytes Page：3 Pages

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.625Watts of Power Dissipation. • Collector-current -0.6A • Collector-base Voltage -60V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: MPS2907/MPS2907A • Lead Fr

TO-92 Plastic-Encapsulate Transistors

General Purpose Transistors

文件：134.69 Kbytes Page：6 Pages

General Purpose Transistor

文件：191.63 Kbytes Page：5 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS PNP 60V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：带盒（TB） 描述：TRANS PNP 60V 0.6A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors

文件：134.69 Kbytes Page：6 Pages

PNP Silicon Plastic-Encapsulate Transistor

文件：287.68 Kbytes Page：2 Pages

PNP Silicon Plastic-Encapsulate Transistor

文件：287.68 Kbytes Page：2 Pages

General Purpose Transistors

文件：134.69 Kbytes Page：6 Pages

General Purpose Transistors(PNP Silicon)

文件：115.46 Kbytes Page：8 Pages

General Purpose Transistors

文件：134.69 Kbytes Page：6 Pages

General Purpose Transistors(PNP Silicon)

文件：115.46 Kbytes Page：8 Pages

General Purpose Transistors(PNP Silicon)

文件：115.46 Kbytes Page：8 Pages

General Purpose Transistors(PNP Silicon)

文件：115.46 Kbytes Page：8 Pages

General Purpose Transistors

文件：134.69 Kbytes Page：6 Pages

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

文件：44.39 Kbytes Page：2 Pages