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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MPA800R | Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD |   | |
MPA800R | Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies | MPD | | |
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD | | ||
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD | | ||
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD | | ||
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD | | ||
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD | | ||
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies 文件：368.91 Kbytes Page：2 Pages | MPD | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, | NEC 瑞萨 | | ||
NSC800TM High-Performance Low-Power CMOS Microprocessor 文件：785.95 Kbytes Page：76 Pages | NSC 国半 | |
MPA800R产品属性
- 类型
描述
- 型号
MPA800R
- 制造商
MPD
- 制造商全称
MicroPower Direct, LLC
- 功能描述
Industrial 800W Single Output Power Factor Corrected AC/DC Power Supplies
MPA800R规格书下载地址
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