SILICON BRIDGE RECTIFIERS

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SINGLE-PHASE SILICON BRIDGE

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TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

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Bridge Rectifier

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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桥式整流器

Bridge

IEEE 802.3af/at/bt-Compliant,PoE, Powered Device Interface

DESCRIPTION The MP8020 is an IEEE 802.3af/at/btcompliant, Power over Ethernet (PoE), powered device (PD). The device supports all the functions of IEEE 802.3af/at/bt, including detection, 5-event classification, input current (IIN) control, and an internal 100V hot-swap MOSFET. The MP8020

丝印代码：8020；IEEE 802.3af/at/bt-Compliant,PoE, Powered Device Interface

DESCRIPTION The MP8020 is an IEEE 802.3af/at/btcompliant, Power over Ethernet (PoE), powered device (PD). The device supports all the functions of IEEE 802.3af/at/bt, including detection, 5-event classification, input current (IIN) control, and an internal 100V hot-swap MOSFET. The MP8020

Glass Passivated Bridge Rectifier

Features • Surge overload rating -175 amperes peak • Low forward voltage drop • Small size; simple installation • Sliver plated copper leads

IEEE 802.3af/at/bt Compliant Powered Device with Power Monitor via I2C Interface

Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat