2.5A, 4MHz, 20V Step-Down Converter

DESCRIPTION The MP4350 is a high frequency step-down switching regulator with an integrated internal high-side high voltage power MOSFET. It provides 2.5A output with current mode control for fast loop response and easy compensation. The wide 4.5V to 20V input range accommodates a variety of ste

2.5A, 4MHz, 20V 降压变换器

MP4350 是一款集成了内部上管高压功率 MOSFET 的高频降压开关调节器。它采用电流控制模式提供 2.5A 电流输出，可通过简单的补偿设计提供快速环路响应。4.5V 至 20V 宽输入范围使其适用于各种降压应用，包括汽车输入环境中的应用。100µA 的工作静态电流允许其使用在电池供电应用中。通过在轻载条件下降低开关频率，以降低开关和栅极驱动损耗，可在宽负载范围内实现高转换效率。频率折叠有助于防止启动过程中电感电流跑飞，过温关断保护确保了工作的稳定性和可靠性。采用 4Mhz 频率时，MP4350 能够防止开关相关的 EMI（电磁干扰）噪音问题，比如 AM 无线电和 ADSL 应用中可能存在 • 100μA 静态电流\n• 宽工作输入电压范围：4.5V 至 20V\n• 3A 峰值开关电流\n• 150mΩ 内部功率 MOSFET\n• 高达 4MHz 可调开关频率\n• 采用陶瓷电容可稳定工作\n• 内部软启动功能\n• 内部电流限制功能，无电流检测电阻\n• 效率高达 95%\n• 输出电压可调范围：0.8V 至 16V\n• 采用 10 引脚 QFN 3x3 封装;

2.5A, 4MHz, 20V Step-Down Converter

DESCRIPTION The MP4350 is a high frequency step-down switching regulator with an integrated internal high-side high voltage power MOSFET. It provides 2.5A output with current mode control for fast loop response and easy compensation. The wide 4.5V to 20V input range accommodates a variety of ste

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC LED DRIVER OFFL 10QFN 集成电路（IC） LED 驱动器

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC LED DRIVER OFFL 10QFN 集成电路（IC） LED 驱动器

POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

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