DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting.

FEATURES

• U.L. Recognized (File #E90700, Volume 2)

• VDE Recognized (File #136616) (add option V for VDE approval, i.e, MOC205V-M)

• Closely Matched Current Transfer Ratios

• Convenient Plastic SOIC-8 Surface Mountable Package Style

• Minimum BVCEOof 70 Volts Guaranteed

• Standard SOIC-8 Footprint, with 0.050 Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

• High Input-Output Isolation of 2500 VAC(rms) Guaranteed

APPLICATIONS

• Feedback Control Circuits

• Interfacing and coupling systems of different potentials and impedances

• General Purpose Switching Circuits

• Monitor and Detection Circuits