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MMUN2111晶体管资料
MMUN2111别名：MMUN2111三极管、MMUN2111晶体管、MMUN2111晶体三极管
MMUN2111生产厂家：
MMUN2111制作材料：Si-P+R
MMUN2111性质：表面帖装型 （SMD）
MMUN2111封装形式：贴片封装
MMUN2111极限工作电压：50V
MMUN2111最大电流允许值：0.1A
MMUN2111最大工作频率：<1MHZ或未知
MMUN2111引脚数：3
MMUN2111最大耗散功率：0.4W
MMUN2111放大倍数：β>35
MMUN2111图片代号：H-15
MMUN2111vtest：50
MMUN2111htest：999900
- MMUN2111atest：0.1
MMUN2111wtest：0.4
MMUN2111代换 MMUN2111用什么型号代替：UN2111,
MMUN2111价格
参考价格：￥0.2695
型号：MMUN2111LT1 品牌：ON 备注：这里有MMUN2111多少钱，2026年最近7天走势，今日出价，今日竞价，MMUN2111批发/采购报价，MMUN2111行情走势销售排行榜，MMUN2111报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMUN2111 | Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis tor with a monolithic bias network cons | LRC 乐山无线电 |   | |
MMUN2111 | Bias Resistor Transistor PNP Silicon Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | | |
MMUN2111 | 数字三极管 | BLUECOLOUR 蓝彩电子 | | |
MMUN2111 | Digital Transistors | WILLAS 威伦电子 | | |
MMUN2111 | PNP Silicon Epitaxial Planar Transistor | LXWIC 力芯微电子 | | |
Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti | LRC 乐山无线电 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monoli | MOTOROLA 摩托罗拉 | | ||
Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisti | LRC 乐山无线电 | | ||
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis tor with a monolithic bias network cons | LRC 乐山无线电 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k 文件：146.35 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：184.73 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k PNP Transistors with Monolithic Bias Resistor Network 文件：149.93 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：108.63 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistors 文件：90.31 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR 文件：188.18 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistors 文件：90.31 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistors PNP Silicon Surface Mount Transistors 文件：196.33 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k PNP Transistors with Monolithic Bias Resistor Network 文件：149.93 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
丝印代码：A6A；Digital Transistors (BRT) 文件：108.63 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：184.73 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k 文件：146.35 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
丝印代码：A6A；Digital Transistors (BRT) 文件：108.63 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k 文件：146.35 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k PNP Transistors with Monolithic Bias Resistor Network 文件：149.93 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：184.73 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
HALF-BRIDGE DRIVER HALF–BRIDGE DRIVER The MPIC2111 is a high voltage, high speed, power MOSFETand IGBT driver with dependent high and low side referenced output channels designed forhalf–bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inp | MOTOROLA 摩托罗拉 | | ||
HALF-BRIDGE DRIVER HALF–BRIDGE DRIVER The MPIC2111 is a high voltage, high speed, power MOSFETand IGBT driver with dependent high and low side referenced output channels designed forhalf–bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inp | MOTOROLA 摩托罗拉 | | ||
HALF-BRIDGE DRIVER HALF–BRIDGE DRIVER The MPIC2111 is a high voltage, high speed, power MOSFETand IGBT driver with dependent high and low side referenced output channels designed forhalf–bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inp | MOTOROLA 摩托罗拉 | | ||
1:10 LVDS clock distribution device DESCRIPTION The PTN2111 is a low skew programmable 1:10 LVDS clock distribution device. The selected input signal is fanned out to 10 identical differential outputs. FEATURES • 100 ps part-to-part skew • 35 ps output-to-output skew • Differential design • Meets LVDS specification for driver | PHILIPS 飞利浦 | | ||
Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing | PANASONIC 松下 | |
MMUN2111产品属性
- 类型
描述
- 型号
MMUN2111
- 制造商
LRC
- 制造商全称
Leshan Radio Company
- 功能描述
Bias Resistor Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
LRC/乐山 |
2026+ |
SOT-23 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON |
24+ |
SOT-23 |
65200 |
一级代理/放心采购 |
|||
ON |
24+ |
SOT-23 |
80000 |
代理进口原装现货假一赔十 |
|||
ON/安森美 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
25+ |
SOT-23(SOT-23-3) |
11580 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON |
25+23+ |
NA |
25054 |
绝对原装正品全新进口深圳现货 |
|||
ONSEMI/安森美 |
2025+ |
SOT-23 |
4659 |
原装进口价格优 请找坤融电子! |
MMUN2111规格书下载地址
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一般描述 该LM129是多方面的，当前的温度补偿的6.9V稳压管的参考与精密 10至100倍以上的分立二极管少动态阻抗。建于一单硅芯片，LM129使用有源电路来缓冲允许内部齐纳器件工作在0.5 mA至15毫安范围内几乎没有变化性能。该LM129是选择的温度系数为0.001可用，0.002，0.005和0.01％/ c.这些新的引用也有良好的长期稳定性和低噪音。齐纳击穿一个新的地下使用的LM129提供低噪声和更好的长期稳定性比coventional集成电路齐纳二极管。进一步Zener和温度补偿晶体管是由一个平面进程，以便他们有免疫问题困扰普通的齐纳二极管。例如，几乎没有在齐纳
2013-3-17
DdatasheetPDF页码索引
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