PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR

FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended.

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended.

For switching and AF amplifier applications

NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended.

PRE-AMPLIFIER, LOW LEVEL, LOW NOISE

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NPN Transistor

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PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

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晶体管

NPN小信号三极管

小信号晶体管

NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE • Complemen to MMPT9015LT1 • Collector-current:Ic=100mA • Collector-Emiller Voltage:VCE=45V • High Totalpower Dissipation Pc=225mW • High life And Good Linearity

TRANSISTOR(NPN)

F E A T U R E S  Complementary to MMBT9015W  Small Surface Mount Package

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

文件：130.68 Kbytes Page：3 Pages

NPN Transistor

文件：752.28 Kbytes Page：3 Pages

NPN Transistor

文件：752.28 Kbytes Page：3 Pages

NPN Transistor

文件：752.28 Kbytes Page：3 Pages

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

文件：130.68 Kbytes Page：3 Pages

NPN EPITAXIAL SILICON TRANSISTOR

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Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be