SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

General Purpose Transistor

General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

General Purpose Transistor

General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 5 dB(MAX) @VCE=5.0V, f=10Hz to 15.7kHz, IC=100uA, RS=1.0kΩ • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon