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MMBT390晶体管资料
MMBT3903别名：MMBT3903三极管、MMBT3903晶体管、MMBT3903晶体三极管
MMBT3903生产厂家：美国摩托罗拉半导体公司
MMBT3903制作材料：
MMBT3903性质：射频/高频放大 （HF）_通用 （G）
MMBT3903封装形式：
MMBT3903极限工作电压：60V
MMBT3903最大电流允许值：0.2A
MMBT3903最大工作频率：<1MHZ或未知
MMBT3903引脚数：
MMBT3903最大耗散功率：0.3W
MMBT3903放大倍数：
MMBT3903图片代号：NO
MMBT3903vtest：60
MMBT3903htest：999900
- MMBT3903atest：0.2
MMBT3903wtest：0.3
MMBT3903代换 MMBT3903用什么型号代替：
MMBT390价格
参考价格：￥0.0754
型号：MMBT3904 品牌：Fairchild 备注：这里有MMBT390多少钱，2025年最近7天走势，今日出价，今日竞价，MMBT390批发/采购报价，MMBT390行情走势销售排行榜，MMBT390报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   | |
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 |  | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics |  | | |
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic | DIODESDiodes Incorporated 美台半导体 |  | | |
SmallSignalTransistors(NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904. | GE GE Industrial Company |  | | |
NPNGeneralPurposeAmplifier Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology |  | | |
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
SMDGeneralPurposeTransistor(NPN) SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance | TAITRON TAITRON Components Incorporated |  | | |
NPNSWITCHINGTRANSISTOR FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | | |
0.2WattsNPNPlastic-EncapsulateTransistors FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | | |
NPNSiliconGeneralPurposeTransistor NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | | |
NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 |  | | |
Amplifiers&Switches Amplifiers&Switches Bipolar:GeneralPurpose | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 |  | | |
NPNSwitchingTransistor ■FEATURES NPNSwitchingTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 |  | | |
iscSiliconNPNTransistor DESCRIPTION •LowVoltageUse •UltraSuperMiniMoldPackage •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
NPNGeneralPurposeAmplifier Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●Marking:1AM | SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司 |  | | |
Low-powerpyroelectricinfraredsensorsignalprocessingchip ProductOverview HM4002isalow-powerpyroelectricinfraredsensorsignalprocessingchip,whichcanbematchedwithinfraredsensorunitSimpleloadsensingON/OFFanddelaytimingfunctioncontrol;atthesametime,thechipbuilt-inhigh-precisionstableLDO2.6VoutputcanprovideRedpower | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 |  | | |
NPNswitchingtransistor FEATURES •CollectorcurrentcapabilityIC=200mA •Collector-emittervoltageVCEO=40V. APPLICATIONS •Generalswitchingandamplification. DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
NPNTransistors Features SmallPackage ComplementarytoMMBT3906T | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
Plastic-EncapsulateTransistors FEATURES ComplementarytoMMBT3906 | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | | |
200mA,40VNPNPlasticEncapsulatedTransistor FEATURES ◆CollectorcurrentcapabilityIC=200mA ◆Collector-emittervoltageVCEO=40V. APPLICATION ◆Generalswitchingandamplification. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●AscomplementarytypethePNPtransistorMMBT3906isrecommended ●Epitaxialplanardieconstruction | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 |  | | |
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
SMALLSIGNALNPNTRANSISTOR SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPN TRANSISTOR ■MINIATURESOT-23PLASTICPACKAGE FORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPEIS MMBT3906 APPLICATIONS ■WELLSUITABLEFORPORTABLE EQUIPMENT ■SMALLLOADSWITCH | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
NPNSILICON GeneralPurposeTransistor NPNSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |  | | |
SurfaceMountSi-Epi-PlanarSwitchingTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 |  | | |
NPNswitchingtransistor | ETC 知名厂家 | ETC | | |
TXRX_982_R1EvaluationBoard SY88973/SY88982/MIC3001-BasedSFPModule GeneralDescription ThisevaluationboardisanimplementationoftheSFPmoduleinadifferentformfactorwithonboardfaultsindicators(LEDs)andaDB-25connectorforserialcommunication.ThedesignusesMicrelsMIC3001controller,SY88982(pincom | MicrelMicrel Semiconductor 麦瑞半导体 |  | | |
Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906 | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 |  | | |
Forswitchingandamplifierapplications NPNSiliconGeneralPurposeTransistors Forswitchingandamplifierapplications | KINGTRONICSKingtronics International Company 金力金力国际公司 |  | | |
NPNSiliconGeneralPurposeTransistor NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
Plastic-EncapsulateTransistors FEATURES AscomplementarytypethePNPtransistorMMBT3906isrecommended Epitaxialplanardieconstruction | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 |  | | |
200mWNPNBipolarTransistors Feature *PowerDissipationPcm=200mW(Ta=25C) *CollectorCurrentIcm=0.2A *Collector-baseVoltageVbr(cbo)=60V *OperatingandStorageJunctionTemperatureRangeTj.Tstg:-55C~+150C *Marking1AM | FCIFirst Components International 戈采戈采企业股份有限公司 |  | | |
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
Plastic-EncapsulateTransistors SOT-23Plastic-EncapsulateTransistors Applications: Forgeneralamplificationandswitching,itiscomplementarytoMMBT3906. | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 |  | | |
GENERALPURPOSEAPPLICATION FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoMMBT3906 | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | | |
NPNTransistor Features ●ForSwitchingandAFAmpliferApplications. ●SiliconEpitaxialChip. | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 |  | | |
TRANSISTOR(NPN) FEATURES ●Ascomplementarytype,thePNPtransistorMMBT3906isRecommended ●Epitaxialplanardieconstruction | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | | |
NPNTransistors Features ●ComplementarytoMMBT3906 ●Marking:1AM | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | | |
TRANSISTOR(PNP) FEATURES ComplementarytoMMBT3906 | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 |  | | |
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●ComplementarytoMMBT3906 | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR Voltage-40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable (MMBT3906) ●IdealforMediumPowerAmplificationand Switching | DIOTECH Diotech Company. |  | | |
NPNGeneralPurposeAmplifier Features •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •RoHScompliantpackage Application •Generalswitchingandamplification | BWTECH Bruckewell Technology LTD |  | | |
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,Lowvoltage。 Applications Generalpurposeamplifierandswitching. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
NPNSilicon Features:Forswitchingandamplifierapplications.AscomplementarytypesthePNPtransistorsMMBT3906isrecommended. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 |  | | |
EiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboard TheEiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboardisaversatileevaluationplatformforthe EiceDRIVER™enhanced1EDI302xAS/1EDI303xASfamily.Itfeaturesahalfbridgeconfiguration,seeFigure1. ThereistheoptiontomounteithertheHybridPACK™DSCIGBTmoduleoradiscreteP | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
40VNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic | DIODESDiodes Incorporated 美台半导体 | | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic | DIODESDiodes Incorporated 美台半导体 | | | |
40VNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic | DIODESDiodes Incorporated 美台半导体 | | | |
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
MMBT390产品属性
- 类型
描述
- 型号
MMBT390
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
NPN(GENERAL PURPOSE TRANSISTOR)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SOT-23 |
15000 |
全新原装现货,价格优势 |
|||
ON |
24+ |
DIP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ON |
24+ |
SOT23 |
2987 |
绝对全新原装现货供应! |
|||
23+ |
17ROHS |
554 |
原装正品--可开增值税发票量大可订货 |
||||
onsemi |
21+ |
SOT-23-3 |
9855571 |
电子元器件一站式配单服务 |
|||
23+ |
SMD |
618000 |
明嘉莱只做原装正品现货 |
||||
LRC |
23+ |
34 |
专做原装正品,假一罚百! |
||||
ON安森美 |
2012 |
SOT-23 |
215 |
全新原装 正品现货 |
|||
ON/安森美 |
24+ |
SOT-23 |
6800000 |
100%进口原装现货,特价销售中 |
|||
MOT |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
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MMBT390数据表相关新闻
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公司名：深圳市轩嘉盛电子有限公司 联系人：吴小姐 微信：13590334401 手机：13590334401 电话：13590334401 地址：深圳市福田区华强北世纪汇广场都会轩4511
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2019-3-5
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