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位置：首页 > IC中文资料第5658页 > MMBT390

MMBT390晶体管资料

  • MMBT3903别名：MMBT3903三极管、MMBT3903晶体管、MMBT3903晶体三极管

  • MMBT3903生产厂家：美国摩托罗拉半导体公司

  • MMBT3903制作材料：

  • MMBT3903性质：射频/高频放大 （HF）_通用 （G）

  • MMBT3903封装形式：

  • MMBT3903极限工作电压：60V

  • MMBT3903最大电流允许值：0.2A

  • MMBT3903最大工作频率：<1MHZ或未知

  • MMBT3903引脚数：

  • MMBT3903最大耗散功率：0.3W

  • MMBT3903放大倍数：

  • MMBT3903图片代号：NO

  • MMBT3903vtest：60

  • MMBT3903htest：999900

  • MMBT3903atest：.2

  • MMBT3903wtest：.3

  • MMBT3903代换 MMBT3903用什么型号代替：

MMBT390价格

参考价格：￥0.0754

型号：MMBT3904 品牌：Fairchild 备注：这里有MMBT390多少钱，2024年最近7天走势，今日出价，今日竞价，MMBT390批发/采购报价，MMBT390行情走势销售排行榜，MMBT390报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBT3904

GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAut

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT3904

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

ZOWIEZOWIE

智威智威科技股份有限公司

ZOWIE
MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable (MMBT3906) •IdealforMediumPowerAmplificationand Switching

TRSYS

Transys Electronics

TRSYS
MMBT3904

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT3904

SmallSignalTransistors(NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904.

GE

GE Industrial Company

GE
MMBT3904

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Capableof350mWattsofPowerDissipationand200mAIc. •OperatingandStorageJunctionTemperatures:-55°Cto150°C •SurfaceMountSOT-23Package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MMBT3904

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistors •HighDCcurrentgain:0.1mAto100mA •Lowcollector-emittersaturationvoltage •ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •Complementarytypes:SMBT3906...MMBT3906 •SMBT3904S:Fororientat

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
MMBT3904

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
MMBT3904

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT3904

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance

TAITRON

TAITRON

TAITRON
MMBT3904

NPNSWITCHINGTRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MMBT3904

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904

0.2WattsNPNPlastic-EncapsulateTransistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MMBT3904

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
MMBT3904

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

PFSShenzhen Ping Sheng Electronics Co., Ltd.

平盛电子深圳市平盛电子有限公司

PFS
MMBT3904

200mA,40VNPNPlasticEncapsulatedTransistor

FEATURES ◆CollectorcurrentcapabilityIC=200mA ◆Collector-emittervoltageVCEO=40V. APPLICATION ◆Generalswitchingandamplification.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MMBT3904

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●AscomplementarytypethePNPtransistorMMBT3906isrecommended ●Epitaxialplanardieconstruction

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
MMBT3904

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.40V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
MMBT3904

SMALLSIGNALNPNTRANSISTOR

SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPN TRANSISTOR ■MINIATURESOT-23PLASTICPACKAGE FORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPEIS MMBT3906 APPLICATIONS ■WELLSUITABLEFORPORTABLE EQUIPMENT ■SMALLLOADSWITCH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MMBT3904

NPNSILICON

GeneralPurposeTransistor NPNSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
MMBT3904

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
MMBT3904

NPNTransistors

Features ●ComplementarytoMMBT3906 ●Marking:1AM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
MMBT3904

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:MMBT3906. FEATURES •CollectorcurrentcapabilityIC=200mA •Collector-emittervoltageVCEO=40V. APPLICATIONS •Generalswitchingandamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
MMBT3904

TXRX_982_R1EvaluationBoard

SY88973/SY88982/MIC3001-BasedSFPModule GeneralDescription ThisevaluationboardisanimplementationoftheSFPmoduleinadifferentformfactorwithonboardfaultsindicators(LEDs)andaDB-25connectorforserialcommunication.ThedesignusesMicrelsMIC3001controller,SY88982(pincom

MicrelMicrel Semiconductor

麦瑞半导体麦克雷尔|麦瑞半导体

Micrel
MMBT3904

Forswitchingandamplifierapplications

NPNSiliconGeneralPurposeTransistors Forswitchingandamplifierapplications

KINGTRONICSKingtronics International Company

金力金力国际公司

KINGTRONICS
MMBT3904

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT3904

Plastic-EncapsulateTransistors

FEATURES AscomplementarytypethePNPtransistorMMBT3906isrecommended Epitaxialplanardieconstruction

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
MMBT3904

200mWNPNBipolarTransistors

Feature *PowerDissipationPcm=200mW(Ta=25C) *CollectorCurrentIcm=0.2A *Collector-baseVoltageVbr(cbo)=60V *OperatingandStorageJunctionTemperatureRangeTj.Tstg:-55C~+150C *Marking1AM

FCI

Amphenol ICC

FCI
MMBT3904

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MMBT3904

Plastic-EncapsulateTransistors

SOT-23Plastic-EncapsulateTransistors Applications: Forgeneralamplificationandswitching,itiscomplementarytoMMBT3906.

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

SHENZHENSLS
MMBT3904

GENERALPURPOSEAPPLICATION

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoMMBT3906

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
MMBT3904

NPNTransistor

Features ●ForSwitchingandAFAmpliferApplications. ●SiliconEpitaxialChip.

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI
MMBT3904

Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●ComplementarytoMMBT3906

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
MMBT3904

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●ComplementarytoMMBT3906

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MMBT3904

NPNGENERALPURPOSESWITCHINGTRANSISTOR

Voltage-40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable (MMBT3906) ●IdealforMediumPowerAmplificationand Switching

DIOTECH

Diotech Company.

DIOTECH
MMBT3904

NPNGeneralPurposeAmplifier

Features •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •RoHScompliantpackage Application •Generalswitchingandamplification

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
MMBT3904

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,Lowvoltage。 Applications Generalpurposeamplifierandswitching.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MMBT3904

Amplifiers&Switches

Amplifiers&Switches Bipolar:GeneralPurpose

AMMSEMI

American Microsemiconductor

AMMSEMI
MMBT3904

NPNSwitchingTransistor

■FEATURES NPNSwitchingTransistor

GSMEGuilin Strong Micro-Electronics Co., Ltd.

Guilin Strong Micro-Electronics Co., Ltd.

GSME
MMBT3904

iscSiliconNPNTransistor

DESCRIPTION •LowVoltageUse •UltraSuperMiniMoldPackage •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Telephonyandprofessionalcommunicationequipment.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MMBT3904

NPNSilicon

Features:Forswitchingandamplifierapplications.AscomplementarytypesthePNPtransistorsMMBT3906isrecommended.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
MMBT3904

TRANSISTOR(NPN)

FEATURES ●Ascomplementarytype,thePNPtransistorMMBT3906isRecommended ●Epitaxialplanardieconstruction

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
MMBT3904

NPNGeneralPurposeAmplifier

Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●Marking:1AM

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
MMBT3904

Low-powerpyroelectricinfraredsensorsignalprocessingchip

ProductOverview HM4002isalow-powerpyroelectricinfraredsensorsignalprocessingchip,whichcanbematchedwithinfraredsensorunitSimpleloadsensingON/OFFanddelaytimingfunctioncontrol;atthesametime,thechipbuilt-inhigh-precisionstableLDO2.6VoutputcanprovideRedpower

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI
MMBT3904.215

EiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboard

TheEiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboardisaversatileevaluationplatformforthe EiceDRIVER™enhanced1EDI302xAS/1EDI303xASfamily.Itfeaturesahalfbridgeconfiguration,seeFigure1. ThereistheoptiontomounteithertheHybridPACK™DSCIGBTmoduleoradiscreteP

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
MMBT3904-13-F

40VNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT3904-7

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT3904-7-F

40VNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT3906) •IdealforMediumPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Devic

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT3904-AE3-R

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT3904-AL3-R

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT3904-AU

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_A0_00001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_A0_10001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_A1_00001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_A1_10001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_A2_00001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_A2_10001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_AD_00001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT3904-AU_AD_10001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

MMBT390产品属性

  • 类型

    描述

  • 型号

    MMBT390

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    NPN(GENERAL PURPOSE TRANSISTOR)

MMBT390供应商更多...

更新时间：2024-6-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MMBT3904LT1
Infineon(英飞凌)
23+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市凌旭科技有限公司
MMBT3904LT1
INFINEON
2016+
SOT-23
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市科恒伟业电子有限公司
MMBT3904LT1
MOT
1715+
SOP
251156
只做原装正品现货假一赔十!
询价
深圳市宝芯创电子有限公司
MMBT3904LT1
ON/安森美
18+
SOT-23
21162
全新原装现货,可出样品,可开增值税发票
询价
深圳市航宇科工半导体有限公司
MMBT3904LT1G
ON/安森美
21+
SOT-23
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
深圳市赛恒电子科技有限公司
MMBT3904LT1G
ON
1812+
SOT-23
3829
原装正品 公司现货 价格优惠
询价
深圳市鑫宇杨电子科技有限公司
MMBT3904LT1
VISHAY
2020+
原厂封装
35000
100%进口原装正品公司现货库存
询价
深圳市诚利顺电子科技有限公司
MMBT3904LT1G
ON
22+
SOT23
3000
十七年VIP会员,诚信经营，一手货源，原装正品可零售！
询价
深圳市振宏微科技有限公司
MMBT3904LT1
LRC
23+
34
专做原装正品,假一罚百!
询价
深圳市博浩通科技有限公司
MMBT3904LT1
WILLAS
23+
SOT23
8653
全新原装优势
询价

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