TXRX_982_R1 Evaluation Board

SY88973/SY88982/MIC3001-Based SFP Module General Description This evaluation board is an implementation of the SFP module in a different form factor with on board faults indicators (LEDs) and a DB-25 connector for serial communication. The design uses Micrels MIC3001 controller, SY88982 (pin com

NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Telephony and professional communication equipment.

NPN Silicon Switching Transistor

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Devic

Surface Mount Si-Epi-Planar Switching Transistors

Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

200mW NPN Bipolar Transistors

Feature * Power Dissipation Pcm= 200 mW (Ta=25C) * Collector Current Icm=0.2A * Collector-base Voltage Vbr (cbo)= 60V * Operating and Storage Junction Temperature Range Tj. Tstg: -55C ~ +150C * Marking 1AM

NPN SILICON

General Purpose Transistor NPN Silicon

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low current, Low voltage。 Applications General purpose amplifier and switching.

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

NPN Silicon

Features: For switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended.

NPN switching transistor

FEATURES • Collector current capability IC = 200 mA • Collector-emitter voltage VCEO = 40 V. APPLICATIONS • General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906.

Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT3906

NPN Transistors

Features ● Complementary to MMBT3906 ● Marking:1AM

Plastic-Encapsulate Transistors

FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction

Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors Applications: For general amplification and switching, it is complementary to MMBT3906.

NPN Transistor

Features ● For Switching and AF Amplifer Applications. ● Silicon Epitaxial Chip.

NPN General Purpose Amplifier

Features • Collector current capability IC = -200 mA • Collector-emitter voltage VCEO = -40 V • RoHS compliant package Application • General switching and amplification

NPN Transistors

Features Small Package Complementary to MMBT3906T

NPN General Purpose Amplifier

Features ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:1AM

NPN General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Capable of 350mWatts of Power Dissipation and 200mA Ic. • Operating and Storage Junction Temperatures: -55°C to 150°C • Surface Mount SOT-23 Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant

0.2 Watts NPN Plastic-Encapsulate Transistors

FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon P/b Lead(Pb)-Free

NPN switching transistor

NPN SWITCHING TRANSISTOR

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBT3906). ● Collector Current Capability ICM =200mA. ● Collector-emitter Voltage VCEO=40V. APPLICATIONS ● General switching and amplification

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● As complementary type the PNP transistor MMBT3906 is recommended ● Epitaxial planar die construction

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

Voltage - 40 Volts Power Dissipation - 300 mWatt FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT3906) ● Ideal for Medium Power Amplification and Switching

Small Signal Transistors (NPN)

FEATURES ◆ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ◆ As complementary type, the PNP transistor MMBT3906 is recommended. ◆ This transistor is also available in the TO-92 case with the type designation 2N3904.

NPN Switching Transistor

■ FEATURES NPN Switching Transistor

isc Silicon NPN Transistor

DESCRIPTION • Low Voltage Use • Ultra Super Mini Mold Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Telephony and professional communication equipment.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT3906

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Pb free product are available : 99 Sn above can meet Rohs environment substance directive request

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● Complementary to MMBT3906

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

200 mA, 40 V NPN Plastic Encapsulated Transistor

FEATURES ◆ Collector current capability IC=200mA ◆ Collector-emitter voltage VCEO=40V. APPLICATION ◆ General switching and amplification.

NPN Silicon General Purpose Transistor

NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906 is recommended.

TRANSISTOR (PNP)

FEATURES Complementary to MMBT3906

SMD General Purpose Transistor (NPN)

SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching

GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

SMALL SIGNAL NPN TRANSISTOR

SMALL SIGNAL NPN TRANSISTOR ■ SILICON EPITAXIAL PLANAR NPN TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPE IS MMBT3906 APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH

NPN Silicon General Purpose Transistor

NPN Silicon General Purpose Transistor for switching and amplifier applications.

GENERAL PURPOSE APPLICATION

FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to MMBT3906

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

For switching and amplifier applications

NPN Silicon General Purpose Transistors For switching and amplifier applications

TRANSISTOR (NPN)

FEATURES ● As complementary type, the PNP transistor MMBT3906 is Recommended ● Epitaxial planar die construction

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complementary to MMBT3906

EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board

The EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board is a versatile evaluation platform for the EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS family. It features a half bridge configuration, see Figure 1. There is the option to mount either the HybridPACK™ DSC IGBT module or a discrete P

40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Devic

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Devic

40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Devic

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/9

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/9

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/9

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2002/9