General Purpose Transistor

Features • General purpose transistor. • Pb?Free package is available.

PNP Silicon General Purpose Transistor

FEATURE ♦ Complementary NPN Type Available(MMBT2222AW) ♦ Epitaxial Planar Die Construction ♦ Ideal for Medium Power Amplification and Switching

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 60 Volts POWER 225 mW FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -60V • Collector current IC = -600mA • In compliance with EU RoHS 2002/95/EC directives and with Halogen Free

PNP General Purpose Transistors

PNP General Purpose Transistors

PNP Silicon Epitaxial Planar Medium Power Transistor

PNP Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2222A ) W

Silicon PNP transistor in a SOT-323 Plastic Package

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PNP Bipolar Transistor

PNP General Purpose Transistor

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General Purpose Transistor

PNP Silicon General Purpose Transistor

General Purpose Transistor(PNP Silicon)

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features • Pb−Free Package is Available

General Purpose Transistor

These transistors are designed for general purpose mplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.

General Purpose Transistor(PNP Silicon)

These transistors are designed for general purpose mplifier applications. They are housed in the SOT–323/ SC–70 package which is designed for low power surface mount applications.

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. Features • Pb−Free Package is Available

General Purpose Transistor

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General Purpose Transistor PNP Silicon

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包装：散装 描述：TRANS SS GP PNP 60V SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistors

三极管

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A SC70-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistor

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General Purpose Transistor PNP Silicon

文件：35.1 Kbytes Page：4 Pages

General Purpose Transistor

文件：73.76 Kbytes Page：5 Pages

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

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