SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

Schottky Barrier Diodes

Features Very low capacitance-less than 1.0Pf @zero volts. Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. Applications —For UHF mixer applications. — —

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

Schottky Barrier Diode

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Schottky Barrier Diode

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Schottky Barrier Diode

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Dual Shottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Avail

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable •

Schottky Barrier Diode

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Dual Schottky Barrier Diode

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Dual Schottky Barrier Diode

Dual Schottky Barrier Diode

文件：43.18 Kbytes Page：4 Pages

Dual Schottky Barrier Diode

文件：43.18 Kbytes Page：4 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE SCHOTTKY 7V 200MW SC70 分立半导体产品 二极管 - 射频

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

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LinCMOSE DUAL DIFFERENTIAL COMPARATOR

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