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MMBD352WT1价格
参考价格：￥0.1920
型号：MMBD352WT1G 品牌：ON Semiconductor 备注：这里有MMBD352WT1多少钱，2026年最近7天走势，今日出价，今日竞价，MMBD352WT1批发/采购报价，MMBD352WT1行情走势销售排行榜，MMBD352WT1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD352WT1 | Dual Shottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero Volts • Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA • Pb−Free Package is Avail | ONSEMI 安森美半导体 |   | |
MMBD352WT1 | Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | |
MMBD352WT1 | Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts\n• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA | LRC 乐山无线电 | | |
MMBD352WT1 | Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable • | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode 文件：43.18 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE SCHOTTKY 7V 200MW SC70 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | ||
Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ 0 V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • AEC Qualified and PPAP Capable • | ONSEMI 安森美半导体 | |
MMBD352WT1产品属性
- 类型
描述
- 型号
MMBD352WT1
- 功能描述
肖特基二极管与整流器 7V 225mW Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
22+ |
SOT-323 |
20000 |
公司只做原装 品质保障 |
|||
Rochester |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ONSEMI/安森美 |
2025+ |
SOT-323 |
2020 |
原装进口价格优 请找坤融电子! |
|||
ON |
23+ |
SOT-323 |
14873 |
正规渠道,只有原装! |
|||
FSC |
22+ |
SOT23 |
13822 |
进口原装 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ONSEMI/安森美 |
25+ |
SOT-323 |
32000 |
ONSEMI/安森美全新特价MMBD352WT1G即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
25+ |
SOT-323 |
90000 |
全新原装现货 |
|||
KEMET(基美) |
25+ |
CASE-B-3528-21(mm) |
5000 |
只做原厂原装 可含税 欢迎咨询 |
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商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） - 漏源电压（Vdss） - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散（Ta=25°C） 225mW
2020-11-12
DdatasheetPDF页码索引
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