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MMBD352LT1G价格
参考价格：￥0.2699
型号：MMBD352LT1G 品牌：ON 备注：这里有MMBD352LT1G多少钱，2026年最近7天走势，今日出价，今日竞价，MMBD352LT1G批发/采购报价，MMBD352LT1G行情走势销售排行榜，MMBD352LT1G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD352LT1G | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 |   | |
MMBD352LT1G | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | | |
MMBD352LT1G | Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | |
MMBD352LT1G | Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | |
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | Motorola 摩托罗拉 | | ||
Dual Hot Carrier Mixer Diodes 文件：93.76 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
Dual Hot Carrier Mixer Diodes 文件：122.87 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | |
MMBD352LT1G产品属性
- 类型
描述
- 型号
MMBD352LT1G
- 功能描述
整流器 7V 225mW Dual
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
SOD |
5000 |
全新原装正品,现货销售 |
|||
ON/安森美 |
23+ |
25850 |
新到现货,只有原装 |
||||
ON/安森美 |
21+ |
SOT-23-3 |
8080 |
只做原装,质量保证 |
|||
ON |
24+ |
SOD |
16500 |
只做原装正品现货 假一赔十 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
|||
ONSEMI/安森美 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
ON/安森美 |
24+ |
SOT-23-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ONN |
2526+ |
原厂封装 |
330 |
只做原装优势现货库存 渠道可追溯 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
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MMBD352LT1G规格书下载地址
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商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） - 漏源电压（Vdss） - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散（Ta=25°C） 225mW
2020-11-12
DdatasheetPDF页码索引
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