TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES * Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES * Metal case for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability

TECHNICAL SPECIFICATION S OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 AmperesFEATURES\n* Metal case for Maximum Heat Dissipation\n* Diffused Junction\n* High current capability\n* Surge overload ratings - 300 Amperes\n* Low forward voltage drop\n* High Reliability * Metal case for Maximum Heat Dissipation\n* Diffused Junction\n* High current capability\n* Surge overload ratings - 300 Amperes\n* Low forward voltage drop\n* High Reliability;

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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