POWER TRANSISTOR

The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. • VCEO

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Contr

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage ,high speed APPLICATIONS • Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage ,high speed APPLICATIONS • Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/relay drivers and deflection circuits

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ lc= 5.0A • Switching Time : tf=0.9us(Max.)@lc=5.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are par

Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A • Switching Time : tf= 0.7μ s(Max.)@ IC= 8.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they ar

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A • Switching Time : tf= 0.7μ s(Max.)@ IC= 8.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they ar

isc Silicon NPN Power Transistor

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POWER TRANSISTOR

Silicon NPN Power Transistors

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Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 PAIR a) Conductor 22 (SOLID) AWG Tinned Copper 0.025 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.045 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED c) Pair 2/Cond Cabled Together (1) Twists: 9.6 Twi

Window “View Port” Plugs

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HEADER AND BASE

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4 twisted pairs shielded, 24 AWG solid bare copper conductors, riser rated, polyolefin insulation

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CUSTOMER PRODUCT SPECIFICATION

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