isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A • Switching Time : tf= 0.7μ s(Max.)@ IC= 8.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they ar

Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A • Switching Time : tf= 0.7μ s(Max.)@ IC= 8.0A APPLICATIONS • Designed for use in high-voltage, high-speed, power switching in inductive circuit, they ar

Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology fo

Series 0517 Pin-Line Vertisocket w/Collet Contacts

FEATURES • Mount components, jumpers, etc., at right angle to PC board • Available in 1 to 25 positions; cuttable to any number desired

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

Nytyes® with Stainless Steel Locking Device

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Nytyes® with Stainless Steel Locking Device

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