POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO =-80 V • DC Current Gain— : hFE = 750(Min) @ IC=-2A • Complement to Type MJE803T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington Central Semiconductor

Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-220 Box

BJT 双极性三极管

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

Capacity (20-hour) 280Ah

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Toggle switches

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