0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability

COMPLEMETARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LI

High Voltage General Purpose Applications

High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350

COMPLEMETARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment

Plastic Medium?뭁ower NPN Silicon Transistor

Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available

Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) • DC Current Gain- : hFE = 30(Min) @ IC= 50mA • Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA • Complement to the PNP MJE350 • Minimum Lot-to-Lot variations for robust device performance and rel

COMPLEMENTARY SILICON PLASTIC POWER TRANSITORS

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE340, MJE350 type are Complementary Silicon Power Transistors designed for power output stages in consumer product applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to the PNP MJE350 APPLICATIONS ·Designed for high voltage

NPN EPITAXIAL SILICON POWER TRANSISTOR

For use in High Voltage General Purpose Applications

COMPLEMETARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in

Plastic Medium?뭁ower NPN Silicon Transistor

Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) • DC Current Gain- : hFE = 100(Min) @ IC= 50mA • Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA APPLICATIONS • Designed for high voltage and general purpose applications.

0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

POWER TRANSISTORS NPN SILICON

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

isc Silicon NPN Power Transistor

APPLICATIONS • Useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

Plastic NPN Silicon Medium-Power Transistors

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fr such as converters and extended range amplifiers.

0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS

NPN Silicon High-Voltage Power Transistors . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40–160 @ IC = 20 mAdc • Current Gain Bandwidth Product — fT = 15 MHz (Min) @ IC = 10 mAdc • Low Output Capacitance Cob = 10pF(

NPN Silicon High?뭋oltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

NPN Silicon High?뭋oltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

NPN Silicon High-Voltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

POWER TRANSISTORS NPN SILICON

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

Plastic NPN Silicon Medium-Power Transistors

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fr such as converters and extended range amplifiers.

SILICON NPN TRANSISTOR

DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ NPN TRANSISTOR

SILICON NPN TRANSISTOR

DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. ■ NPN TRANSISTOR

Plastic NPN Silicon Medium-Power Transistor

Plastic NPN Silicon Medium−Power Transistor This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features • Pb−Free Package is Available*

Silicon PNP Power Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium-Power NPN Silicon Transistor

文件：118.25 Kbytes Page：4 Pages

Plastic Medium-Power NPN Silicon Transistor

文件：118.25 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 300V 0.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon High-Voltage Power Transistors

文件：87.77 Kbytes Page：2 Pages

Plastic NPN Silicon Medium?뭁ower Transistor

文件：68.05 Kbytes Page：3 Pages

Plastic NPN Silicon Medium?뭁ower Transistor

文件：68.05 Kbytes Page：3 Pages

Plastic NPN Silicon Medium?뭁ower Transistor

文件：68.05 Kbytes Page：3 Pages