MJE3439晶体管资料

  • MJE3439别名:MJE3439三极管、MJE3439晶体管、MJE3439晶体三极管

  • MJE3439生产厂家:美国摩托罗拉半导体公司

  • MJE3439制作材料:Si-NPN

  • MJE3439性质:低频或音频放大 (LF)_视频输出 (Vid)_功率放大

  • MJE3439封装形式:直插封装

  • MJE3439极限工作电压:350V

  • MJE3439最大电流允许值:0.3A

  • MJE3439最大工作频率:<1MHZ或未知

  • MJE3439引脚数:3

  • MJE3439最大耗散功率:15W

  • MJE3439放大倍数

  • MJE3439图片代号:B-21

  • MJE3439vtest:350

  • MJE3439htest:999900

  • MJE3439atest:0.3

  • MJE3439wtest:15

  • MJE3439代换 MJE3439用什么型号代替:BD410,2N5657,

MJE3439价格

参考价格:¥1.0836

型号:MJE3439G 品牌:ON SEMICONDUCTOR 备注:这里有MJE3439多少钱,2025年最近7天走势,今日出价,今日竞价,MJE3439批发/采购报价,MJE3439行情走势销售排行榜,MJE3439报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE3439

NPN Silicon High?뭋oltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

ONSEMI

安森美半导体

MJE3439

0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS

NPN Silicon High-Voltage Power Transistors . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40–160 @ IC = 20 mAdc • Current Gain Bandwidth Product — fT = 15 MHz (Min) @ IC = 10 mAdc • Low Output Capacitance Cob = 10pF(

Motorola

摩托罗拉

MJE3439

NPN Silicon High-Voltage Power Transistors

文件:87.77 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE3439

0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS

ETC

知名厂家

MJE3439

Trans GP BJT NPN 350V 0.3A 3-Pin TO-225 Bulk

NJS

MJE3439

Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Central

NPN Silicon High?뭋oltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

ONSEMI

安森美半导体

NPN Silicon High-Voltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 350V 0.3A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male angled D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; PUR green cable, 4-wires, 2x2x0.34 mm²

BELDEN

百通

Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Gate Including a N-ch BC3134K and a P-ch BC3139K (independently) In a Package APPLICATION Load/ Power Switching Interfacing Switching Battery Management for Ultra Small Portable Elect

GWSEMI

唯圣电子

USB Micro B Cable with Data/Charge Sync Switch

文件:130.09 Kbytes Page:2 Pages

Adafruit

Beaded Ties

文件:106.3 Kbytes Page:1 Pages

Heyco

N channelP Channel MOSFET

文件:1.024119 Mbytes Page:6 Pages

JIANGSU

长电科技

MJE3439产品属性

  • 类型

    描述

  • 型号

    MJE3439

  • 功能描述

    两极晶体管 - BJT 0.3A 350V 15W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
22+
TO126
100000
代理渠道/只做原装/可含税
MOTOROLA/摩托罗拉
25+
TO-225AATO-126
54558
百分百原装现货 实单必成 欢迎询价
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON
22+
TO-220-3
50000
ON二三极管全系列在售
MOT
23+
TO-126
138775
ST
25+
TO-126
2987
只售原装自家现货!诚信经营!欢迎来电!
ST/意法
21+
TO-225AATO-126
6796
优势供应 实单必成 可13点增值税
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
MJE3439
25+
6
6
ON
24+
N/A
5000
公司存货

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