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MJE3439晶体管资料
MJE3439别名：MJE3439三极管、MJE3439晶体管、MJE3439晶体三极管
MJE3439生产厂家：美国摩托罗拉半导体公司
MJE3439制作材料：Si-NPN
MJE3439性质：低频或音频放大 （LF）_视频输出 （Vid）_功率放大
MJE3439封装形式：直插封装
MJE3439极限工作电压：350V
MJE3439最大电流允许值：0.3A
MJE3439最大工作频率：<1MHZ或未知
MJE3439引脚数：3
MJE3439最大耗散功率：15W
MJE3439放大倍数：
MJE3439图片代号：B-21
MJE3439vtest：350
MJE3439htest：999900
- MJE3439atest：.3
MJE3439wtest：15
MJE3439代换 MJE3439用什么型号代替：BD410,2N5657,
MJE3439价格
参考价格：￥1.0836
型号：MJE3439G 品牌：ON SEMICONDUCTOR 备注：这里有MJE3439多少钱，2024年最近7天走势，今日出价，今日竞价，MJE3439批发/采购报价，MJE3439行情走势销售排行榜，MJE3439报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE3439 | 0.3AMPEREPOWERTRANSISTORNPNSILICON350VOLTS15WATTS NPNSiliconHigh-VoltagePowerTransistors ...designedforuseinline–operatedequipmentrequiringhighfT. •HighDCCurrentGain hFE=40–160@IC=20mAdc •CurrentGainBandwidthProduct— fT=15MHz(Min)@IC=10mAdc •LowOutputCapacitance Cob=10pF( | MotorolaMotorola, Inc 摩托罗拉 |  |   |
MJE3439 | NPNSiliconHigh?뭋oltagePowerTransistor NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJE3439 | NPNSiliconHigh-VoltagePowerTransistors 文件：87.77 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
NPNSiliconHigh-VoltagePowerTransistor NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNSiliconHigh?뭋oltagePowerTransistor NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 350V 0.3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Plastic-EncapsulateMOSFETS FEATURE SurfaceMountPackage LowRDS(on) OperatedatLowLogicLevelGateDrive ESDProtectedGate IncludingaN-chBC3134KandaP-chBC3139K (independently)InaPackage APPLICATION Load/PowerSwitching InterfacingSwitching BatteryManagementforUltraSmallPortableElect | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 |  | | |
BeadedTies 文件：106.3 Kbytes Page：1 Pages | Heyco Heyco |  | | |
NchannelPChannelMOSFET 文件：1.024119 Mbytes Page：6 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
SOT-363Plastic-EncapsulateMOSFETS 文件：879.9 Kbytes Page：2 Pages | ZPSEMI ZP Semiconductor |  | | |
NPNSILICONPLASTICHIGHVOLTAGEPOWERTRANSISTORS 文件：573.52 Kbytes Page：4 Pages | CDIL CDIL |  | |
MJE3439产品属性
- 类型
描述
- 型号
MJE3439
- 功能描述
两极晶体管 - BJT 0.3A 350V 15W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
PTIF |
2315+ |
SOP/DIP |
3699 |
优势代理渠道,原装现货,可全系列订货 |
|||
ON/安森美 |
24+ |
TO-225 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
MJE3439 |
6 |
6 |
|||||
ON(安森美) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
MOT |
2017+ |
TO-126 |
21458 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
ON |
23+ |
TO-225 |
7750 |
全新原装优势 |
|||
ONN |
2345+ |
原厂封装 |
213 |
只做原装优势现货库存 渠道可追溯 |
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MJE3439规格书下载地址
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MJE3439数据表相关新闻
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DdatasheetPDF页码索引
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