0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability

COMPLEMETARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LI

High Voltage General Purpose Applications

High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350

COMPLEMETARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment

Plastic Medium?뭁ower NPN Silicon Transistor

Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available

Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) • DC Current Gain- : hFE = 30(Min) @ IC= 50mA • Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA • Complement to the PNP MJE350 • Minimum Lot-to-Lot variations for robust device performance and rel

COMPLEMENTARY SILICON PLASTIC POWER TRANSITORS

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE340, MJE350 type are Complementary Silicon Power Transistors designed for power output stages in consumer product applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to the PNP MJE350 APPLICATIONS ·Designed for high voltage

NPN EPITAXIAL SILICON POWER TRANSISTOR

For use in High Voltage General Purpose Applications

Medium Power NPN Transistor

Feature: • NPN Plastic Medium Power Silicon Transistor • Useful for High Voltage General Purpose Applications Description Transistor, NPN, TO-126

Medium Power NPN Transistors

Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

音频功放晶体管

互补功率晶体管

Silicon PNP Power Transistors

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COMPLEMETARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a Silicon Epitaxial Planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in

Medium Power NPN Transistors

Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

Plastic Medium?뭁ower NPN Silicon Transistor

Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) • DC Current Gain- : hFE = 100(Min) @ IC= 50mA • Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA APPLICATIONS • Designed for high voltage and general purpose applications.

Plastic Medium-Power NPN Silicon Transistor

文件：118.25 Kbytes Page：4 Pages

Plastic Medium-Power NPN Silicon Transistor

文件：118.25 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 300V 0.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

An extensive range of premium quality, problem solving adapters including 1/4, XLR, RCA, DMX, BNC, 75/110 Ohm, impedance matching transformers, and much more.

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