MJE30晶体管资料

  • MJE30别名:MJE30三极管、MJE30晶体管、MJE30晶体三极管

  • MJE30生产厂家:美国摩托罗拉半导体公司

  • MJE30制作材料

  • MJE30性质:低频或音频放大 (LF)_功率放大 (PA)

  • MJE30封装形式:直插封装

  • MJE30极限工作电压:40V

  • MJE30最大电流允许值:1A

  • MJE30最大工作频率:<1MHZ或未知

  • MJE30引脚数:3

  • MJE30最大耗散功率:30W

  • MJE30放大倍数

  • MJE30图片代号:A-100

  • MJE30vtest:40

  • MJE30htest:999900

  • MJE30atest:1

  • MJE30wtest:30

  • MJE30代换 MJE30用什么型号代替

MJE30价格

参考价格:¥1.6227

型号:MJE3055T 品牌:STMICROELECTRONICS 备注:这里有MJE30多少钱,2024年最近7天走势,今日出价,今日竞价,MJE30批发/采购报价,MJE30行情走势销售排行榜,MJE30报价。
型号 功能描述 生产厂家&企业 LOGO 操作

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung Group

三星三星半导体

Samsung

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

General Purpose and Switching Applications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Plastic-Encapsulated Transistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

Plastic-Encapsulate Power Transistors

Plastic-EncapsulatePowerTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955 APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPN Silicon Plastic-Encapsulate Transistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Capableof2.0WattsofPowerDissipation. •Collector-current10A •Collector-baseVoltage70V •Operatingandst

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeandSwitchingApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

TRANSISTOR (NPN)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

TO-220-3L Plastic-Encapsulate Transistors

FEATURES GeneralPurposeandSwitchingApplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Complementary Silicon power transistors (10A / 60V / 75W)

DESCRIPTION TheMJE3055Aisasiliconepitaxial-baseplanarNPNtransistorinTO-220ABpackage. ltisintendedforuseingeneral-purposeamplifierandswitdingapplications. ThecomplementaryPNPtypeisMJE2955A. FEATURES ●Designedforgeneral-purposeswitchingandamplifierapplications.

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARYSILICONPOWERTRANSISTORS.

MOSPEC

MOSPEC

MOSPEC

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung Group

三星三星半导体

Samsung

General Purpose and Switching Applications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

COMPLEMENTARY SILICON POWER TRANSISTORS

■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designedforgeneralpurposeamplifierandswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

Complementary Silicon Plastic Power Transistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955T APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE2955T ·DCcurrentgain-hFE=20–70@IC=4Adc ·Collector–emittersaturationvoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc APPLICATIONS ·Designedforgeneral–purpose switchingandamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LargeDCcurrent(IC=10A),highfT(fT≥2Mhz). Applications Generalpurposeandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

CDIL

CDIL

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: *PowerDissipation-PD=75W©Tc=25°C *DCCurrentGainhFE=20-100©lc=4.0A *vCE(isrt)=1-1V(Max.)©lc=4.0A,IB=400mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARY SILICON POWER TRANSISTORS

PowerTransistors

CentralCentral Semiconductor Corp

美国中央半导体

Central

Complementary Silicon Plastic Power Transistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

CDIL

CDIL

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

isc Silicon NPN Power Transistor

文件:147.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TO-220 - Power Transistors and Darlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Silicon NPN Power Transistors

文件:123.16 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

MJE30产品属性

  • 类型

    描述

  • 型号

    MJE30

  • 制造商

    Motorola

  • 功能描述

    MJE304 MOT'96 S7A1A

更新时间:2024-5-1 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
长电
22+23+
TO-220-3L
24761
绝对原装正品全新进口深圳现货
FSC
23+
TOP220
4500
全新原装、诚信经营、公司现货销售!
ON/安森美
TO-220
265209
假一罚十原包原标签常备现货!
ST
22+
TO-220
10033
进口原装
M
24+
TO 220
157380
明嘉莱只做原装正品现货
5000
公司存货
CJ
1833+
TO220-3L
1000
原装现货!天天特价!随时可以货!
长电
21+
TO-220-3L
56000
公司进口原装现货 批量特价支持
原厂
23+
TO-220
5000
原装正品,假一罚十
FSC
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!

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MJE30数据表相关新闻