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MJE3055晶体管资料
MJE3055别名：MJE3055三极管、MJE3055晶体管、MJE3055晶体三极管
MJE3055生产厂家：美国摩托罗拉半导体公司
MJE3055制作材料：Si-NPN
MJE3055性质：低频或音频放大 （LF）_功率放大 （L）
MJE3055封装形式：直插封装
MJE3055极限工作电压：70V
MJE3055最大电流允许值：10A
MJE3055最大工作频率：<1MHZ或未知
MJE3055引脚数：3
MJE3055最大耗散功率：90W
MJE3055放大倍数：
MJE3055图片代号：B-21
MJE3055vtest：70
MJE3055htest：999900
- MJE3055atest：10
MJE3055wtest：90
MJE3055代换 MJE3055用什么型号代替：BD207,BD213/80,BD607,3DD166B,
MJE3055价格
参考价格：￥1.6227
型号：MJE3055T 品牌：STMICROELECTRONICS 备注：这里有MJE3055多少钱，2025年最近7天走势，今日出价，今日竞价，MJE3055批发/采购报价，MJE3055行情走势销售排行榜，MJE3055报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE3055 | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc | Motorola 摩托罗拉 |   | |
MJE3055 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES | STMICROELECTRONICS 意法半导体 | | |
MJE3055 | NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C) | Samsung 三星 | | |
MJE3055 | SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | | |
MJE3055 | General Purpose and Switching Applications General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJE3055 | Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL 东电电子 | | |
MJE3055 | Plastic-Encapsulate Power Transistors Plastic-Encapsulate Power Transistors P/b Lead(Pb)-Free | WEITRON | | |
MJE3055 | isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain-: hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. | ISC 无锡固电 | | |
MJE3055 | NPN Silicon Plastic-Encapsulate Transistor Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Capable of 2.0Watts of Power Dissipation. • Collector-current 10A • Collector-base Voltage 70V • Operating and st | MCC 美微科 | | |
MJE3055 | TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● General Purpose and Switching Applications | JIANGSU 长电科技 | | |
MJE3055 | TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
MJE3055 | TO-220-3L Plastic-Encapsulate Transistors FEATURES General Purpose and Switching Applications | DGNJDZ 南晶电子 | | |
MJE3055 | Complementary Silicon Plastic Power Transistors Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* | SYC | | |
MJE3055 | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 文件：213.09 Kbytes Page：2 Pages | Motorola 摩托罗拉 | | |
Complementary Silicon power transistors (10A / 60V / 75W) DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. FEATURES ● Designed for general-purpose switching and amplifier applications. | NELLSEMI 尼尔半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Power Transistors | Central | | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Large DC current(IC=10A),high fT(fT≥2Mhz). Applications General purpose and switching applications. | FOSHAN 蓝箭电子 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES | STMICROELECTRONICS 意法半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain-: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·DC current gain -hFE= 20–70 @ IC=4Adc ·Collector–emitter saturation voltage - VCE(sat)= 1.1 Vdc (Max) @ IC=4Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. | SAVANTIC | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. | TGS | | ||
Complementary Silicon Plastic Power Transistors 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min | ONSEMI 安森美半导体 | | ||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier andswitching applications. | DCCOM | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C) | Samsung 三星 | | ||
General Purpose and Switching Applications General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARY SILICON POWER TRANSISTORS. | MOSPEC 统懋 | | ||
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc | Motorola 摩托罗拉 | | ||
SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | | ||
Complementary Silicon Plastic Power Transistors 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications | CDIL | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
isc Silicon NPN Power Transistor 文件：147.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
HIGH VOLTAGE TRANSISTOR 文件：119.69 Kbytes Page：2 Pages | UTC 友顺 | | ||
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 文件：213.09 Kbytes Page：2 Pages | Motorola 摩托罗拉 | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN Power Transistors 文件：123.16 Kbytes Page：4 Pages | SAVANTIC | | ||
TO-220 - Power Transistors and Darlingtons 文件：76.15 Kbytes Page：3 Pages | RECTRON | | ||
HIGH VOLTAGE TRANSISTOR 文件：119.69 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：133.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：119.69 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：133.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：133.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：119.69 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：133.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：119.69 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：133.98 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：119.69 Kbytes Page：2 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：133.98 Kbytes Page：3 Pages | UTC 友顺 | |
MJE3055产品属性
- 类型
描述
- 型号
MJE3055
- 制造商
TRSYS
- 制造商全称
Transys Electronics
- 功能描述
Plastic-Encapsulated Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST(意法半导体) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
UTC |
23+ |
NPN三极管/60V/10A/1.75W |
8687 |
正迈科技原装现货授权代理主营:IC电容.二三级管原装 |
|||
ST(意法) |
24+ |
TO-220(TO-220-3) |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI |
23+ |
SOT23 |
2000 |
全新原装假一赔十 |
|||
ST |
2023+ |
TO220 |
5800 |
进口原装,现货热卖 |
|||
ST/ON/FSC |
2023+ |
TO220-3 |
50000 |
进口原装现货 |
|||
FAIRCHILD |
24+ |
TO220 |
5000 |
原厂授权代理 价格绝对优势 |
|||
CJ/长电 |
23+ |
TO-220-3L |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
MJE3055芯片相关品牌
MJE3055规格书下载地址
MJE3055参数引脚图相关
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MJE3055数据表相关新闻
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