MJE3055晶体管资料

  • MJE3055别名:MJE3055三极管、MJE3055晶体管、MJE3055晶体三极管

  • MJE3055生产厂家:美国摩托罗拉半导体公司

  • MJE3055制作材料:Si-NPN

  • MJE3055性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE3055封装形式:直插封装

  • MJE3055极限工作电压:70V

  • MJE3055最大电流允许值:10A

  • MJE3055最大工作频率:<1MHZ或未知

  • MJE3055引脚数:3

  • MJE3055最大耗散功率:90W

  • MJE3055放大倍数

  • MJE3055图片代号:B-21

  • MJE3055vtest:70

  • MJE3055htest:999900

  • MJE3055atest:10

  • MJE3055wtest:90

  • MJE3055代换 MJE3055用什么型号代替:BD207,BD213/80,BD607,3DD166B,

MJE3055价格

参考价格:¥1.6227

型号:MJE3055T 品牌:STMICROELECTRONICS 备注:这里有MJE3055多少钱,2024年最近7天走势,今日出价,今日竞价,MJE3055批发/采购报价,MJE3055行情走势销售排行榜,MJE3055报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE3055

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MJE3055

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung Group

三星三星半导体

Samsung
MJE3055

SILICONEPITAXIALPLANARTRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
MJE3055

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE3055

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
MJE3055

Plastic-EncapsulatePowerTransistors

Plastic-EncapsulatePowerTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
MJE3055

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955 APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE3055

NPNSiliconPlastic-EncapsulateTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Capableof2.0WattsofPowerDissipation. •Collector-current10A •Collector-baseVoltage70V •Operatingandst

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJE3055

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeandSwitchingApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MJE3055

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
MJE3055

TO-220-3LPlastic-EncapsulateTransistors

FEATURES GeneralPurposeandSwitchingApplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

ComplementarySiliconpowertransistors(10A/60V/75W)

DESCRIPTION TheMJE3055Aisasiliconepitaxial-baseplanarNPNtransistorinTO-220ABpackage. ltisintendedforuseingeneral-purposeamplifierandswitdingapplications. ThecomplementaryPNPtypeisMJE2955A. FEATURES ●Designedforgeneral-purposeswitchingandamplifierapplications.

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

COMPLEMENTARYSILICONPOWERTRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: *PowerDissipation-PD=75W©Tc=25°C *DCCurrentGainhFE=20-100©lc=4.0A *vCE(isrt)=1-1V(Max.)©lc=4.0A,IB=400mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARYSILICONPOWERTRANSISTORS

PowerTransistors

CentralCentral Semiconductor Corp

美国中央半导体

Central

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

CDIL

CDIL

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LargeDCcurrent(IC=10A),highfT(fT≥2Mhz). Applications Generalpurposeandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955T APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE2955T ·DCcurrentgain-hFE=20–70@IC=4Adc ·Collector–emittersaturationvoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc APPLICATIONS ·Designedforgeneral–purpose switchingandamplifierapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS

ComplementarySiliconPlasticPowerTransistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierandswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

COMPLEMENTARYSILICONPOWERTRANSISTORS

■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung Group

三星三星半导体

Samsung

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

POWERTRANSISTORS(10A,60V,75W)

COMPLEMENTARYSILICONPOWERTRANSISTORS.

MOSPEC

MOSPEC

MOSPEC

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托罗拉

Motorola

SILICONEPITAXIALPLANARTRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

ComplementarySiliconPlasticPowerTransistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

CDIL

CDIL

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

iscSiliconNPNPowerTransistor

文件:147.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SiliconNPNPowerTransistors

文件:123.16 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

TO-220-PowerTransistorsandDarlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:119.69 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGETRANSISTOR

文件:133.98 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

MJE3055产品属性

  • 类型

    描述

  • 型号

    MJE3055

  • 制造商

    TRSYS

  • 制造商全称

    Transys Electronics

  • 功能描述

    Plastic-Encapsulated Transistors

更新时间:2024-3-28 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
22+
TO-220-3
6006
原装正品现货 可开增值税发票
FSC
21+
TO-220
800
十年信誉,只做原装,有挂就有现货!
ON
23+
TO220AB
56000
STTO220
23+
原厂原装
11260
进口原厂原装
ST/意法半导体
2023
TO-220-3
6000
公司原装现货/支持实单
ST/意法
21+
NA
65250
只做原装,假一罚十
ST/意法半导体
22+
TO-220-3
4650
绝对原装公司现货
FSC/Fairchild Semiconductor Co
21+
TO-220
5033
优势代理渠道,原装正品,可全系列订货开增值税票
CJ
2017+
TO220-3L
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
ST/意法
21+
TO220
50000
只做原装

MJE3055芯片相关品牌

  • ANAREN
  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • Philips
  • WALSIN
  • WURTH

MJE3055数据表相关新闻