4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The central semiconductor mje240, mje250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A • Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A • Complement to Type MJE253 APPLICATIONS • Designed for low power audio ampli

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-126 CASE MJE240, MJE250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features High VCEO， Large DC current, high fT, low VCE(sat). Applications Low power audio amplifier, high speed switching applications.

NPN EPITAXIAL SILICON POWER TRANSISTOR

NPN EPITAXIAL SILICON POWER TRANSISTOR Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

Trans GP BJT NPN 100V 4A 3-Pin TO-126

音频功放晶体管

音频三极管

COMPLEMENTARY SILICON POWER TRANSITORS

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Complementary Silicon Power Plastic Transistors

文件：193.18 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

文件：90.14 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

文件：90.14 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors

文件：193.18 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors

文件：193.18 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

文件：90.14 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors

文件：97.35 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Silicon Power Plastic Transistors

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POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —