MJE243晶体管资料

  • MJE243别名:MJE243三极管、MJE243晶体管、MJE243晶体三极管

  • MJE243生产厂家:美国摩托罗拉半导体公司

  • MJE243制作材料:Si-NPN

  • MJE243性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE243封装形式:直插封装

  • MJE243极限工作电压:100V

  • MJE243最大电流允许值:4A

  • MJE243最大工作频率:<1MHZ或未知

  • MJE243引脚数:3

  • MJE243最大耗散功率:15W

  • MJE243放大倍数

  • MJE243图片代号:B-21

  • MJE243vtest:100

  • MJE243htest:999900

  • MJE243atest:4

  • MJE243wtest:15

  • MJE243代换 MJE243用什么型号代替:BD243D,BD591,BD601,3DA99C,

MJE243价格

参考价格:¥1.1240

型号:MJE243G 品牌:ON 备注:这里有MJE243多少钱,2025年最近7天走势,今日出价,今日竞价,MJE243批发/采购报价,MJE243行情走势销售排行榜,MJE243报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE243

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Motorola

摩托罗拉

MJE243

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

ONSEMI

安森美半导体

MJE243

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The central semiconductor mje240, mje250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

Central

MJE243

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A • Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A • Complement to Type MJE253 APPLICATIONS • Designed for low power audio ampli

ISC

无锡固电

MJE243

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-126 CASE MJE240, MJE250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE243

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features High VCEO, Large DC current, high fT, low VCE(sat). Applications Low power audio amplifier, high speed switching applications.

FOSHAN

蓝箭电子

MJE243

NPN EPITAXIAL SILICON POWER TRANSISTOR

NPN EPITAXIAL SILICON POWER TRANSISTOR Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

CDIL

MJE243

COMPLEMENTARY SILICON POWER TRANSITORS

文件:80.93 Kbytes Page:1 Pages

Central

MJE243

Complementary Silicon Power Plastic Transistors

文件:193.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJE243

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

文件:90.14 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJE243

Trans GP BJT NPN 100V 4A 3-Pin TO-126

NJS

MJE243

音频功放晶体管

thundersoft

中科创达

MJE243

音频三极管

FOSHAN

蓝箭电子

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

文件:90.14 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Plastic Transistors

文件:193.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

文件:90.14 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Plastic Transistors

文件:193.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Silicon Power Plastic Transistors

文件:97.35 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Plastic Transistors

文件:97.35 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件:124.92 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Low forward voltage drop

文件:225.85 Kbytes Page:4 Pages

SMC

桑德斯微电子

SCHOTTKY RECTIFIER

文件:104.04 Kbytes Page:5 Pages

IRF

Interactive Catalog Replaces Catalog Pages

文件:348.38 Kbytes Page:5 Pages

Honeywell

霍尼韦尔

MJE243产品属性

  • 类型

    描述

  • 型号

    MJE243

  • 功能描述

    两极晶体管 - BJT 4A 100V 15W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-9-30 9:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-126
8650
受权代理!全新原装现货特价热卖!
ON Semiconductor
2022+
539
全新原装 货期两周
ON/安森美
23+
TO-126
50000
全新原装正品现货,支持订货
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ON
17+
TO-225
9888
只做原装,现货库存
ON/安森美
2021+
TO-225
9000
原装现货,随时欢迎询价
ON
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
MOT
8439
131
公司优势库存 热卖中!
ON
24+
SMD
12000
原厂/代理渠道价格优势
ON
23+
TO-125
48500

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