PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

Trans GP BJT PNP 25V 5A 3-Pin TO-126

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Cha

SYSTEM RESET IC

文件：314.14 Kbytes Page：11 Pages

SYSTEM RESET IC

文件：314.14 Kbytes Page：11 Pages

SYSTEM RESET IC

文件：314.14 Kbytes Page：11 Pages

SYSTEM RESET IC

文件：314.14 Kbytes Page：11 Pages