Bipolar NPN Transistor

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network

The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need to guarantee an hFE window.

Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ IC = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic VCEsat

• Characteristics Make It Suitable for PFC Application

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• Six Sigma® Process Providing Tight and Reproductible Parameter Spreads

• Pb−Free Package is Available