MJE150晶体管资料

  • MJE15028别名:MJE15028三极管、MJE15028晶体管、MJE15028晶体三极管

  • MJE15028生产厂家:美国摩托罗拉半导体公司

  • MJE15028制作材料

  • MJE15028性质:低频或音频放大 (LF)_功率放大 (PA)

  • MJE15028封装形式:直插封装

  • MJE15028极限工作电压:120V

  • MJE15028最大电流允许值:8A

  • MJE15028最大工作频率:<1MHZ或未知

  • MJE15028引脚数:3

  • MJE15028最大耗散功率:50W

  • MJE15028放大倍数

  • MJE15028图片代号:B-92

  • MJE15028vtest:120

  • MJE15028htest:999900

  • MJE15028atest:8

  • MJE15028wtest:50

  • MJE15028代换 MJE15028用什么型号代替:2SC681,2SC901,2SC1617,2SD388,3DK106E,

MJE150价格

参考价格:¥2.8087

型号:MJE15028G 品牌:ON 备注:这里有MJE150多少钱,2024年最近7天走势,今日出价,今日竞价,MJE150批发/采购报价,MJE150行情走势销售排行榜,MJE150报价。
型号 功能描述 生产厂家&企业 LOGO 操作

POWERTRANSISTORS(8.0A,120-150V,50W)

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. FEATURES: •Collector–EmitterSustainingVoltage— VCEO(sus)=120Vdc(Min)—MJE15028,MJE15029 =150Vdc(Min)—MJE15030,MJE15031 •DCCurrentGai

MOSPEC

MOSPEC

MOSPEC

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120-150VOLTS50WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. •DCCurrentGainSpecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc =20(Min)@IC=4.0Adc •Collector–EmitterSustainingVoltage— VCEO(sus

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforuseashigh−frequencydriversinaudioamplifiers. Features •HighCurrentGain−BandwidthProduct •TO−220CompactPackage •TheseDevicesarePb−FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HIGHFREQUENCYDRIVERSINAUDIOAMPLIFIERS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •ComplementtotypeMJE15029 •Hightransitionfrequency •DCcurrentgainspecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc hFE=20(Min)@IC=4.0Adc APPLICATIONS •Designedforuseashigh–frequencydriversinaudioamplifiers.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •ComplementtotypeMJE15029 •Hightransitionfrequency •DCcurrentgainspecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc hFE=20(Min)@IC=4.0Adc APPLICATIONS •Designedforuseashigh–frequencydriversinaudioamplifiers.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •ComplementtotypeMJE15029 •Hightransitionfrequency •DCcurrentgainspecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc hFE=20(Min)@IC=4.0Adc APPLICATIONS •Designedforuseashigh–frequencydriversinaudioamplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE15028/MJE15029SeriestypesareComplementarySiliconPowerTransistorsdesignedforuseinaudioamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

PLASTICPOWERTRANSISTORS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

CDIL

CDIL

CDIL

PLASTICPOWERTRANSISTORS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

CDIL

CDIL

CDIL

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE15028/MJE15029SeriestypesareComplementarySiliconPowerTransistorsdesignedforuseinaudioamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

HIGHFREQUENCYDRIVERSINAUDIOAMPLIFIERS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforuseashigh−frequencydriversinaudioamplifiers. Features •HighCurrentGain−BandwidthProduct •TO−220CompactPackage •TheseDevicesarePb−FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120-150VOLTS50WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. •DCCurrentGainSpecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc =20(Min)@IC=4.0Adc •Collector–EmitterSustainingVoltage— VCEO(sus

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTORS(8.0A,120-150V,50W)

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. FEATURES: •Collector–EmitterSustainingVoltage— VCEO(sus)=120Vdc(Min)—MJE15028,MJE15029 =150Vdc(Min)—MJE15030,MJE15031 •DCCurrentGai

MOSPEC

MOSPEC

MOSPEC

POWERTRANSISTORS(8.0A,120-150V,50W)

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. FEATURES: •Collector–EmitterSustainingVoltage— VCEO(sus)=120Vdc(Min)—MJE15028,MJE15029 =150Vdc(Min)—MJE15030,MJE15031 •DCCurrentGai

MOSPEC

MOSPEC

MOSPEC

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120-150VOLTS50WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. •DCCurrentGainSpecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc =20(Min)@IC=4.0Adc •Collector–EmitterSustainingVoltage— VCEO(sus

MotorolaMotorola, Inc

摩托罗拉

Motorola

HIGHFREQUENCYDRIVERSINAUDIOAMPLIFIERS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •ComplementtotypeMJE15031 •Hightransitionfrequency •DCcurrentgainspecifiedto4.0amperes hFE=40(Min)@IC=3.0Adc hFE=20(Min)@IC=4.0Adc APPLICATIONS •Designedforuseashigh–frequency driversinaudioamplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

GateDriver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

POWEREX

POWEREX

PLASTICPOWERTRANSISTORS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

CDIL

CDIL

CDIL

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features HighDCcurrentgain,HighVCEO,HighfT,ComplementarypairwithMJE15031. Applications Designedforusashigh-frequencydriversinaudioamplifiers.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE15028/MJE15029SeriestypesareComplementarySiliconPowerTransistorsdesignedforuseinaudioamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforuseashigh−frequencydriversinaudioamplifiers. Features •HighCurrentGain−BandwidthProduct •TO−220CompactPackage •TheseDevicesarePb−FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •ComplementtotypeMJE15031 •Hightransitionfrequency •DCcurrentgainspecifiedto4.0amperes hFE=40(Min)@IC=3.0Adc hFE=20(Min)@IC=4.0Adc APPLICATIONS •Designedforuseashigh–frequency driversinaudioamplifiers.

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERTRANSISTORSCOMPLEMENTARYSILICON

Thesedevicesaredesignedforuseashigh−frequencydriversinaudioamplifiers. Features •HighCurrentGain−BandwidthProduct •TO−220CompactPackage •TheseDevicesarePb−FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE15028/MJE15029SeriestypesareComplementarySiliconPowerTransistorsdesignedforuseinaudioamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWERTRANSISTORS(8.0A,120-150V,50W)

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. FEATURES: •Collector–EmitterSustainingVoltage— VCEO(sus)=120Vdc(Min)—MJE15028,MJE15029 =150Vdc(Min)—MJE15030,MJE15031 •DCCurrentGai

MOSPEC

MOSPEC

MOSPEC

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120-150VOLTS50WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. •DCCurrentGainSpecifiedto4.0Amperes hFE=40(Min)@IC=3.0Adc =20(Min)@IC=4.0Adc •Collector–EmitterSustainingVoltage— VCEO(sus

MotorolaMotorola, Inc

摩托罗拉

Motorola

HIGHFREQUENCYDRIVERSINAUDIOAMPLIFIERS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca

PLASTICPOWERTRANSISTORS

MJE15028,15030NPNPLASTICPOWERTRANSISTORS MJE15029,15031PNPPLASTICPOWERTRANSISTORS HighfrequencyDriversinAudioAmplifiers

CDIL

CDIL

CDIL

GateDriver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

POWEREX

POWEREX

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features HighDCcurrentgain,HighVCEO,HighfT,ComplementarypairwithMJE15033. Applications Designedforusashigh-frequencydriversinaudioamplifiers.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SILICONEPITAXIALPOWERTRANSISTORS

SILICONEPITAXIALPOWERTRANSISTORS High-FrequencyDriversinAudioAmplifier

CDIL

CDIL

CDIL

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPlasticPowerTransistors Designedforuseashigh−frequencydriversinaudioamplifiers. Features •DCCurrentGainSpecifiedto5.0Amperes hFE=70(Min)@IC=0.5Adc =10(Min)@IC=2.0Adc •Collector−EmitterSus

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

8.0AMPERESPOWERTRANSISTORSCOMPLEMENTARYSILICON250VOLTS50WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. •DCCurrentGainSpecifiedto5.0Amperes hFE=50(Min)@IC=0.5Adc =10(Min)@IC=2.0Adc •Collector–EmitterSustainingVoltage— VCEO

MotorolaMotorola, Inc

摩托罗拉

Motorola

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=250V(Min) •DCcurrentgain- :hFE=50(Min)@IC=0.5A :hFE=10(Min)@IC=2.0A •ComplementtoTypeMJE15033 APPLICATIONS •Designedforuseashigh–frequencydriversinaudio amplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •ComplementtotypeMJE15033 •Hightransitionfrequency •DCcurrentgainspecifiedto5.0amperes hFE=50(Min)@IC=0.5Adc hFE=10(Min)@IC=2.0Adc APPLICATIONS •Designedforuseashigh–frequency driversinaudioamplifier

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONEPITAXIALPOWERTRANSISTORS

SILICONEPITAXIALPOWERTRANSISTORS High-FrequencyDriversinAudioAmplifier

CDIL

CDIL

CDIL

SILICONEPITAXIALPOWERTRANSISTORS

SILICONEPITAXIALPOWERTRANSISTORS High-FrequencyDriversinAudioAmplifier

CDIL

CDIL

CDIL

8.0AMPERESPOWERTRANSISTORSCOMPLEMENTARYSILICON250VOLTS50WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseashigh–frequencydriversinaudioamplifiers. •DCCurrentGainSpecifiedto5.0Amperes hFE=50(Min)@IC=0.5Adc =10(Min)@IC=2.0Adc •Collector–EmitterSustainingVoltage— VCEO

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPlasticPowerTransistors Designedforuseashigh−frequencydriversinaudioamplifiers. Features •DCCurrentGainSpecifiedto5.0Amperes hFE=70(Min)@IC=0.5Adc =10(Min)@IC=2.0Adc •Collector−EmitterSus

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICONEPITAXIALPOWERTRANSISTORS

SILICONEPITAXIALPOWERTRANSISTORS High-FrequencyDriversinAudioAmplifier

CDIL

CDIL

CDIL

4.0AMPERESPOWERTRANSISTORSCOMPLEMENTARYSILICON350VOLTS50WATTS

MJE15034NPN,MJE15035PNP 4.0AMPERESPOWERTRANSISTORSCOMPLEMENTARYSILICON350VOLTS50WATTS ...designedforuseashigh−frequencydriversinaudioamplifiers. •hFE=100(Min)@IC=0.5Adc =10(Min)@IC=2.0Adc •Collector−EmitterSustainingVoltageVCEO(sus)=

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4.0AMPERESPOWERTRANSISTORSCOMPLEMENTARYSILICON350VOLTS50WATTS

MJE15034NPN,MJE15035PNP 4.0AMPERESPOWERTRANSISTORSCOMPLEMENTARYSILICON350VOLTS50WATTS ...designedforuseashigh−frequencydriversinaudioamplifiers. •hFE=100(Min)@IC=0.5Adc =10(Min)@IC=2.0Adc •Collector−EmitterSustainingVoltageVCEO(sus)=

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120??50VOLTS,50WATTS

文件:79.97 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TO-220-PowerTransistorsandDarlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

ComplementarySiliconPlasticPowerTransistors

文件:82.12 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

文件:120.29 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120??50VOLTS,50WATTS

文件:79.97 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementarySiliconPlasticPowerTransistors

文件:82.12 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-220-3 包装:管件 描述:TRANS NPN 120V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120??50VOLTS,50WATTS

文件:79.97 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

8AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON120??50VOLTS,50WATTS

文件:79.97 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TO-220-PowerTransistorsandDarlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

SiliconPNPPowerTransistors

文件:157.28 Kbytes Page:4 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

文件:118.91 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:181.61 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP 120V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementarySiliconPlasticPowerTransistors

文件:82.12 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJE150产品属性

  • 类型

    描述

  • 型号

    MJE150

  • 功能描述

    两极晶体管 - BJT 8A 120V 50W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-6-24 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
0N
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHILD/仙童
24+
TO 220
154877
明嘉莱只做原装正品现货
onsemi
24+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
BOCA
23+
NA
19960
只做进口原装,终端工厂免费送样
ON
11+
400
原装正品长期供货,如假包赔包换 徐小姐13714450367
SPTECH(深圳质超)
23+
TO220
6000
诚信服务,绝对原装原盘
ON
1738+
TO-220
8529
科恒伟业!只做原装正品,假一赔十!
ON/安森美
23+
TO-220
30000
全新原装现货,价格优势
ON/安森美
06+
TO-220
154
ON
09+
TO-220
6000
绝对原装自己现货

MJE150芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

MJE150数据表相关新闻