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MJE150晶体管资料
MJE15028别名：MJE15028三极管、MJE15028晶体管、MJE15028晶体三极管
MJE15028生产厂家：美国摩托罗拉半导体公司
MJE15028制作材料：
MJE15028性质：低频或音频放大 （LF）_功率放大 （PA）
MJE15028封装形式：直插封装
MJE15028极限工作电压：120V
MJE15028最大电流允许值：8A
MJE15028最大工作频率：<1MHZ或未知
MJE15028引脚数：3
MJE15028最大耗散功率：50W
MJE15028放大倍数：
MJE15028图片代号：B-92
MJE15028vtest：120
MJE15028htest：999900
- MJE15028atest：8
MJE15028wtest：50
MJE15028代换 MJE15028用什么型号代替：2SC681,2SC901,2SC1617,2SD388,3DK106E,
MJE150价格
参考价格：￥2.8087
型号：MJE15028G 品牌：ON 备注：这里有MJE150多少钱，2025年最近7天走势，今日出价，今日竞价，MJE150批发/采购报价，MJE150行情走势销售排行榜，MJE150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER TRANSISTORS COMPLEMENTARY SILICON These devices are designed for use as high−frequency drivers in audio amplifiers. Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 |   | ||
HIGH FREQUENCY DRIVERS IN AUDIO AMPLIFIERS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | boca 博卡 | | ||
PLASTIC POWER TRANSISTORS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE15028/MJE15029 Series types are Complementary Silicon Power Transistors designed for use in audio amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
POWER TRANSISTORS(8.0A,120-150V,50W) Complementary Silicon Plastic Power Transistors ... designed for use as high–frequency drivers in audio amplifiers. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 = 150 Vdc (Min) — MJE15030, MJE15031 • DC Current Gai | MOSPEC 统懋 | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type MJE15029 • High transition frequency • DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS • Designed for use as high–frequency drivers in audio amplifiers. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type MJE15029 • High transition frequency • DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS • Designed for use as high–frequency drivers in audio amplifiers. | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type MJE15029 • High transition frequency • DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS • Designed for use as high–frequency drivers in audio amplifiers. | SAVANTIC | | ||
POWER TRANSISTORS(8.0A,120-150V,50W) Complementary Silicon Plastic Power Transistors ... designed for use as high–frequency drivers in audio amplifiers. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 = 150 Vdc (Min) — MJE15030, MJE15031 • DC Current Gai | MOSPEC 统懋 | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus | Motorola 摩托罗拉 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE15028/MJE15029 Series types are Complementary Silicon Power Transistors designed for use in audio amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
PLASTIC POWER TRANSISTORS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | CDIL | | ||
HIGH FREQUENCY DRIVERS IN AUDIO AMPLIFIERS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | boca 博卡 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON These devices are designed for use as high−frequency drivers in audio amplifiers. Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON These devices are designed for use as high−frequency drivers in audio amplifiers. Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
HIGH FREQUENCY DRIVERS IN AUDIO AMPLIFIERS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | boca 博卡 | | ||
PLASTIC POWER TRANSISTORS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE15028/MJE15029 Series types are Complementary Silicon Power Transistors designed for use in audio amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an | POWEREX | | ||
POWER TRANSISTORS(8.0A,120-150V,50W) Complementary Silicon Plastic Power Transistors ... designed for use as high–frequency drivers in audio amplifiers. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 = 150 Vdc (Min) — MJE15030, MJE15031 • DC Current Gai | MOSPEC 统懋 | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type MJE15031 • High transition frequency • DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS • Designed for use as high–frequency drivers in audio amplifiers. | SAVANTIC | | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High DC current gain, High VCEO, High fT, Complementary pair with MJE15031. Applications Designed for us as high-frequency drivers in audio amplifiers. | FOSHAN 蓝箭电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type MJE15031 • High transition frequency • DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS • Designed for use as high–frequency drivers in audio amplifiers. | ISC 无锡固电 | | ||
Bipolar Transistor Description: TO-220 NPN silicon plastic transistor designed for use in high frequency drivers in audio amplifier applications Features: Collector Emitter Saturation Voltage, Vceo = 120V D.C.Current Gain Specified to 8 Ampers, hfe = 40 min. @ Ic = 3A hfe = 20 min. @ Ic = 4A Description B | MULTICOMP 易络盟 | | ||
Complementary Silicon Plastic Power Transistors Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* | SYC | | ||
POWER TRANSISTORS(8.0A,120-150V,50W) Complementary Silicon Plastic Power Transistors ... designed for use as high–frequency drivers in audio amplifiers. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 = 150 Vdc (Min) — MJE15030, MJE15031 • DC Current Gai | MOSPEC 统懋 | | ||
Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an | POWEREX | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus | Motorola 摩托罗拉 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE15028/MJE15029 Series types are Complementary Silicon Power Transistors designed for use in audio amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
PLASTIC POWER TRANSISTORS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | CDIL | | ||
HIGH FREQUENCY DRIVERS IN AUDIO AMPLIFIERS MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers | boca 博卡 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON These devices are designed for use as high−frequency drivers in audio amplifiers. Features • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. Features • DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC= 0.5 Adc = 10 (Min) @ IC= 2.0 Adc • Collector−Emitter Sus | ONSEMI 安森美半导体 | | ||
SILICON EPITAXIAL POWER TRANSISTORS SILICON EPITAXIAL POWER TRANSISTORS High - Frequency Drivers in Audio Amplifier | CDIL | | ||
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — VCEO | Motorola 摩托罗拉 | | ||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High DC current gain, High VCEO, High fT, Complementary pair with MJE15033. Applications Designed for us as high-frequency drivers in audio amplifiers. | FOSHAN 蓝箭电子 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • DC current gain - : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A • Complement to Type MJE15033 APPLICATIONS • Designed for use as high–frequency drivers in audio amplifiers. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • Complement to type MJE15033 • High transition frequency • DC current gain specified to 5.0 amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc APPLICATIONS • Designed for use as high–frequency drivers in audio amplifier | SAVANTIC | | ||
SILICON EPITAXIAL POWER TRANSISTORS SILICON EPITAXIAL POWER TRANSISTORS High - Frequency Drivers in Audio Amplifier | CDIL | | ||
SILICON EPITAXIAL POWER TRANSISTORS SILICON EPITAXIAL POWER TRANSISTORS High - Frequency Drivers in Audio Amplifier | CDIL | | ||
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — VCEO | Motorola 摩托罗拉 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Plastic Power Transistors Designed for use as high−frequency drivers in audio amplifiers. Features • DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC= 0.5 Adc = 10 (Min) @ IC= 2.0 Adc • Collector−Emitter Sus | ONSEMI 安森美半导体 | | ||
SILICON EPITAXIAL POWER TRANSISTORS SILICON EPITAXIAL POWER TRANSISTORS High - Frequency Drivers in Audio Amplifier | CDIL | | ||
4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS MJE15034 NPN,MJE15035 PNP 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS . . . designed for use as high−frequency drivers in audio amplifiers. •hFE= 100 (Min) @ IC= 0.5 Adc = 10 (Min) @ IC= 2.0 Adc •Collector−Emitter Sustaining Voltage VCEO(sus) = | ONSEMI 安森美半导体 | | ||
4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS MJE15034 NPN,MJE15035 PNP 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS . . . designed for use as high−frequency drivers in audio amplifiers. •hFE= 100 (Min) @ IC= 0.5 Adc = 10 (Min) @ IC= 2.0 Adc •Collector−Emitter Sustaining Voltage VCEO(sus) = | ONSEMI 安森美半导体 | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120??50 VOLTS, 50 WATTS 文件：79.97 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：82.12 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
TO-220 - Power Transistors and Darlingtons 文件：76.15 Kbytes Page：3 Pages | RECTRON 丽正国际 | | ||
Silicon NPN Power Transistors 文件：120.29 Kbytes Page：4 Pages | SAVANTIC | | ||
音频功放晶体管 | thundersoft 中科创达 | | ||
三极管 | MOSPEC 统懋 | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120??50 VOLTS, 50 WATTS 文件：79.97 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：82.12 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120??50 VOLTS, 50 WATTS 文件：79.97 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 120V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
8.0 A，120 V，PNP 双极功率晶体管 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 120V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：120.55 Kbytes Page：4 Pages | SAVANTIC | |
MJE150产品属性
- 类型
描述
- 型号
MJE150
- 功能描述
两极晶体管 - BJT 8A 120V 50W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-220(TO-220-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
TOOHONG太虹 |
24+ |
NA/ |
3373 |
原装现货,当天可交货,原型号开票 |
|||
MOT |
25+23+ |
TO-220 |
15549 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
21+ |
TO-220(TO-220-3) |
8080 |
只做原装,质量保证 |
|||
SPTECH |
2407+ |
TO-220. |
30098 |
全新原装!仓库现货,大胆开价! |
|||
Toohong |
24+ |
TO-220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
MOTOROLA |
19+ |
TO-220 |
12500 |
||||
24+ |
TO-220 |
10000 |
全新 |
||||
ON |
1728+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
MJE150规格书下载地址
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MJE150数据表相关新闻
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