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位置：首页 > IC中文资料第5897页 > MJD29

MJD29晶体管资料

  • MJD29别名：MJD29三极管、MJD29晶体管、MJD29晶体三极管

  • MJD29生产厂家：韩国三星公司

  • MJD29制作材料：

  • MJD29性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD29封装形式：贴片封装

  • MJD29极限工作电压：

  • MJD29最大电流允许值：1A

  • MJD29最大工作频率：<1MHZ或未知

  • MJD29引脚数：3

  • MJD29最大耗散功率：15W

  • MJD29放大倍数：

  • MJD29图片代号：G-217

  • MJD29vtest：0

  • MJD29htest：999900

  • MJD29atest：1

  • MJD29wtest：15

  • MJD29代换 MJD29用什么型号代替：

MJD29价格

参考价格：￥1.5499

型号：MJD2955G 品牌：ONSemi 备注：这里有MJD29多少钱，2025年最近7天走势，今日出价，今日竞价，MJD29批发/采购报价，MJD29行情走势销售排行榜，MJD29报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD29

General Purpose Amplifier Low Speed Switching Applications

General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C

Fairchild

仙童半导体

MJD29

General Purpose Amplifier Low Speed Switching Applications

ONSEMI

安森美半导体

MJD2955

TRANSISTOR (PNP)

FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Electrically Simiar to MJD3055 ● DC Current Gain Specified to10 Amperes

FS

MJD2955

Complementary Power Transistors

MJD2955 (PNP) MJD3055 (NPN) SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Strai

ONSEMI

安森美半导体

MJD2955

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

STMICROELECTRONICS

意法半导体

MJD2955

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) • Electrically Similar to Popular MJE2955T • DC Current Gain Specified to 10A • High Current G

Fairchild

仙童半导体

MJD2955

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A • Complement to Type MJD3055 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

ISC

无锡固电

MJD2955

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Electrically Simiar to MJD3055 ● DC Current Gain Specified to 10 Amperes

JIANGSU

长电科技

MJD2955-1G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD29C

General Purpose Amplifier Low Speed Switching Applications

General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C

Fairchild

仙童半导体

MJD2955

60V,10A,Medium Power PNP Bipolar Transistor

GALAXY

银河微电

MJD2955

晶体管

JSCJ

长晶科技

MJD2955

General Purpose Amplifier

文件：49 Kbytes Page：4 Pages

Fairchild

仙童半导体

MJD2955

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955

COMPLEMENTARY POWER TRANSISTORS

文件：188.18 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD2955_02

COMPLEMENTARY POWER TRANSISTORS

文件：188.18 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD2955_06

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955_11

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955_13

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955-001

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955-001

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 60V 10A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD2955-001G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955-1G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955-1G

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 60V 10A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955T4

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955TF

General Purpose Amplifier

文件：49 Kbytes Page：4 Pages

Fairchild

仙童半导体

MJD29产品属性

  • 类型

    描述

  • 型号

    MJD29

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    General Purpose Amplifier Low Speed Switching Applications

MJD29供应商更多...

更新时间：2025-10-31 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市宏世佳电子科技有限公司
MJD2955
MOTOROLA
2025+
TO-252
4835
全新原厂原装产品、公司现货销售
询价
深圳市冠亿通科技有限公司
MJD2955T4G
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市富达微科技有限公司
MJD2955T4G
ON
24+
TO-252
8000
原厂原装，价格优势，欢迎洽谈！
询价
深圳市亿联芯电子科技有限公司
MJD2955T4G
ON/安森美
2023+
TO-252
8635
全新原装正品,优势价格
询价
深圳市得捷芯城科技有限公司
MJD2955TF
FAIRCHILD/仙童
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市高捷芯城科技有限公司
MJD2955TF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市星佑电子有限公司
MJD2955T4
ST
06+
?TO-252
1000
全新原装 绝对有货
询价
深圳市腾亿芯科技有限公司
MJD2955T4G
ON(安森美)
25+
标准封装
8000
原装，请咨询
询价
深圳市富利微电子科技有限公司
MJD2955T4G
ON/安森美
24+
TO252
33500
全新进口原装现货,假一罚十
询价
深圳市芯球通科技有限公司
MJD2955T4G
ON(安森美)
23+
TO-252-2(DPAK)
14216
公司只做原装正品,假一赔十
询价

MJD29芯片相关品牌

MJD29规格书下载地址

MJD29参数引脚图相关

MJD29数据表相关新闻

DdatasheetPDF页码索引

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