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MJD29晶体管资料
MJD29别名：MJD29三极管、MJD29晶体管、MJD29晶体三极管
MJD29生产厂家：韩国三星公司
MJD29制作材料：
MJD29性质：低频或音频放大 （LF）_功率放大 （PA）
MJD29封装形式：贴片封装
MJD29极限工作电压：
MJD29最大电流允许值：1A
MJD29最大工作频率：<1MHZ或未知
MJD29引脚数：3
MJD29最大耗散功率：15W
MJD29放大倍数：
MJD29图片代号：G-217
MJD29vtest：0
MJD29htest：999900
- MJD29atest：1
MJD29wtest：15
MJD29代换 MJD29用什么型号代替：
MJD29价格
参考价格：￥1.5499
型号：MJD2955G 品牌：ONSemi 备注：这里有MJD29多少钱，2024年最近7天走势，今日出价，今日竞价，MJD29批发/采购报价，MJD29行情走势销售排行榜，MJD29报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD29 | General Purpose Amplifier Low Speed Switching Applications GeneralPurposeAmplifier LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP29andTIP29C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
Complementary Power Transistors MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •Strai | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularMJE2955T •DCCurrentGainSpecifiedto10A •HighCurrentG | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
isc Silicon PNP Power Transistor DESCRIPTION •ExcellentSafeOperatingArea •Collector-EmitterSaturationVoltage- :VCE(sat)=-1.1V(Max)@IC=-4A •ComplementtoTypeMJD3055 •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICA | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications ●ElectricallySimiartoMJD3055 ●DCCurrentGainSpecifiedto10Amperes | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
TRANSISTOR (PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications ●ElectricallySimiartoMJD3055 ●DCCurrentGainSpecifiedto10Amperes | FS First Silicon Co., Ltd |  | | |
Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General Purpose Amplifier Low Speed Switching Applications GeneralPurposeAmplifier LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP29andTIP29C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
General Purpose Amplifier 文件：49 Kbytes Page：4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Complementary Power Transistors 文件：138.37 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.1 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
COMPLEMENTARY POWER TRANSISTORS 文件：188.18 Kbytes Page：6 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
COMPLEMENTARY POWER TRANSISTORS 文件：188.18 Kbytes Page：6 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.1 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：138.37 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 60V 10A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：138.37 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 60V 10A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.1 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：138.37 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors DPAK For Surface Mount Applications 文件：78.33 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.1 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：138.37 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General Purpose Amplifier 文件：49 Kbytes Page：4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJD29产品属性
- 类型
描述
- 型号
MJD29
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
General Purpose Amplifier Low Speed Switching Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONN |
23+ |
N/A |
19350 |
原装原装原装哈 |
|||
长电 |
2024 |
TO252 |
10541 |
原装现货,欢迎咨询 |
|||
23+ |
N/A |
35800 |
正品授权货源可靠 |
||||
FAIRCHILD/仙童 |
SOT252 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ON |
19+ |
DPAK3(SI |
84462 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
FAIRCHILD/仙童 |
22+ |
3000 |
只做原装进口 免费送样!! |
||||
ON/安森美 |
2122+ |
TO252 |
18990 |
原装正品,假一赔十,价格优势 |
|||
FAIRCHILD |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CJ/长电 |
22+ |
TO-252 |
13783 |
原装正品现货,可开13点税 |
|||
ON/安森美 |
2105+ |
TO-252 |
10053 |
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MJD29规格书下载地址
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