MJD122T4G价格

参考价格:¥0.9296

型号:MJD122T4G 品牌:ON 备注:这里有MJD122T4G多少钱,2025年最近7天走势,今日出价,今日竞价,MJD122T4G批发/采购报价,MJD122T4G行情走势销售排行榜,MJD122T4G报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD122T4G

Complementary Darlington Power Transistor

文件:87.53 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件:136.31 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件:106.5 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD122T4G

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

Complementary Darlington Power Transistor

文件:87.53 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Complementary Darlington Power Transistor

文件:136.31 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MJD122T4G产品属性

  • 类型

    描述

  • 型号

    MJD122T4G

  • 功能描述

    达林顿晶体管 8A 100V Bipolar Power NPN

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-8-9 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
TO-252
27048
原厂可订货,技术支持,直接渠道。可签保供合同
ON
2016+
TO-252
35890
只做原装,假一罚十,公司可开17%增值税发票!
ONSEMI/安森美
25+
TO252
20300
ONSEMI/安森美原装特价MJD122T4G即刻询购立享优惠#长期有货
ON
24+
SOT252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ON/安森美
23+
TO-252
15000
全新原装现货,价格优势
ON
20+
TO-252
50000
全新原装公司现货
ON
23+
TO252
80
原装现货假一赔十
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
ON
23+
DPAK
56000

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