MJ3晶体管资料

  • MJ3000别名:MJ3000三极管、MJ3000晶体管、MJ3000晶体三极管

  • MJ3000生产厂家:美国摩托罗拉半导体公司

  • MJ3000制作材料:Si-N+Darl+Di

  • MJ3000性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • MJ3000封装形式:直插封装

  • MJ3000极限工作电压:60V

  • MJ3000最大电流允许值:10A

  • MJ3000最大工作频率:<1MHZ或未知

  • MJ3000引脚数:2

  • MJ3000最大耗散功率:150W

  • MJ3000放大倍数:β>1000

  • MJ3000图片代号:E-44

  • MJ3000vtest:60

  • MJ3000htest:999900

  • MJ3000atest:10

  • MJ3000wtest:150

  • MJ3000代换 MJ3000用什么型号代替:BDW83A...D,BDX65A...C,BDX67,FH9C,MJ4033,2N6057,2N6058,2N6059,

MJ3价格

参考价格:¥0.8982

型号:MJ32 品牌:Apem 备注:这里有MJ3多少钱,2024年最近7天走势,今日出价,今日竞价,MJ3批发/采购报价,MJ3行情走势销售排行榜,MJ3报价。
型号 功能描述 生产厂家&企业 LOGO 操作

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

MotorolaMotorola, Inc

摩托罗拉

Motorola

Power Transistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30

COMSET

Comset Semiconductor

COMSET

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

Silicon complementary trasistors power darlington

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

Medium-Power Complementary Silicon Transistors

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30

COMSET

Comset Semiconductor

COMSET

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain— hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Power Transistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30

COMSET

Comset Semiconductor

COMSET

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheMJ2501isaSiliconEpitaxial-BasePNPpowertransistorsinmonolithicDarlingtonconfiguration,mountedinJedecTO-3metacase.Itisintentedforuseinpowerlinearandswitchingapplications. ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

10 Ampere Darlington Power Transistors Complementary Silicon

[multicomp] Features: •Medium-powercomplementarySiliconTransistorsforuseasoutputdevicesin complementarygeneralpurposeamplifierapplications. •HighDCCurrentGain hFE=1000(Typical)atIC=5.0A. •MonolithicconstructionwithbuiltBase-EmitterShuntResistors.

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

Medium-Power Complementary Silicon Transistors

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30

COMSET

Comset Semiconductor

COMSET

Silicon complementary trasistors power darlington

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

Central

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON

HIGHVOLTAGESILICONPOWERDARLINGTON DARLINGTON10AMPEREDARLINGTONNPNSILICONPOWERTRANSISTORS300,350VOLTS275WATTS ...delvelopedforlineoperatedamplifier,seriespassandswitchingregulatorapplications.

MotorolaMotorola, Inc

摩托罗拉

Motorola

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE=100(Min)@IC=2.5A ·Collector-EmitterSustainingVoltageVCEO(SUS)=300V(Min) APPLICATIONS ·Developedforlineoperatedamplifier,seriespassandSwitchingregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON

HIGHVOLTAGESILICONPOWERDARLINGTON DARLINGTON10AMPEREDARLINGTONNPNSILICONPOWERTRANSISTORS300,350VOLTS275WATTS ...delvelopedforlineoperatedamplifier,seriespassandswitchingregulatorapplications.

MotorolaMotorola, Inc

摩托罗拉

Motorola

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION •Built-inBase-EmitterShuntResistors •HighDCcurrentgainhFE=250(Min)@IC=2.5A •Collector-EmitterSustainingVoltageVCEO(SUS)=300V(Min) APPLICATIONS •Developedforlineoperatedamplifier,seriespassandSwitchingregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE=250(Min)@IC=2.5A ·Collector-EmitterSustainingVoltageVCEO(SUS)=350V(Min) APPLICATIONS ·Developedforlineoperatedamplifier,seriespassandSwitchingregulatorapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON

HIGHVOLTAGESILICONPOWERDARLINGTON DARLINGTON10AMPEREDARLINGTONNPNSILICONPOWERTRANSISTORS300,350VOLTS275WATTS ...delvelopedforlineoperatedamplifier,seriespassandswitchingregulatorapplications.

MotorolaMotorola, Inc

摩托罗拉

Motorola

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

ComplementaryNPN-PNPSiliconPowerBipolarTransistor TheMJ3281AandMJ1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •GainComplementary: —GainLinearityfrom100mAto7A —Hi

MotorolaMotorola, Inc

摩托罗拉

Motorola

Silicon NPN Power Transistors

文件:119.97 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3

文件:16.329 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

Silicon NPN Power Transistors

文件:119.97 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件:51.79 Kbytes Page:4 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

包装:卷带(TR) 描述:RESISTOR AXIAL 电阻器 通孔式电阻器

OHMITE

OHMITE MANUFACTURING COMPANY

OHMITE

封装/外壳:轴向 包装:卷带(TR) 描述:RES 301 OHM 1% 1/8W AXIAL 电阻器 通孔式电阻器

OHMITE

OHMITE MANUFACTURING COMPANY

OHMITE

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:14.38 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

isc Silicon NPN Power Transistor

文件:144.41 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.

文件:10.94 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:11.93 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

Bipolar PNP Device in a Hermetically sealed TO66

文件:16.11 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.

文件:11.07 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

SEME-LAB

COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR

文件:221.68 Kbytes Page:6 Pages

MotorolaMotorola, Inc

摩托罗拉

Motorola

1 cell lithium?밿on/lithium?뱎olymer battery protection IC

文件:233.31 Kbytes Page:3 Pages

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

MITSUMI

1 cell lithium?밿on/lithium?뱎olymer battery protection IC

文件:233.31 Kbytes Page:3 Pages

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

MITSUMI

1 cell lithium?밿on/lithium?뱎olymer battery protection IC

文件:233.31 Kbytes Page:3 Pages

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

MITSUMI

1 cell lithium?밿on/lithium?뱎olymer battery protection IC

文件:233.31 Kbytes Page:3 Pages

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

MITSUMI

1 cell lithium?밿on/lithium?뱎olymer battery protection IC

文件:233.31 Kbytes Page:3 Pages

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

MITSUMI

1 cell lithium?밿on/lithium?뱎olymer battery protection IC

文件:233.31 Kbytes Page:3 Pages

MITSUMIMITSUMI ELECTRIC CO.,LTD.

美上美三美电机株式会社

MITSUMI

Magnetic field sensor

文件:226.32 Kbytes Page:2 Pages

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福(北京)过程自动化倍加福(北京)过程自动化控制设备有限公司

PF

Magnetic field sensor

文件:207.5 Kbytes Page:2 Pages

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福(北京)过程自动化倍加福(北京)过程自动化控制设备有限公司

PF

isc Silicon NPN Power Transistor

文件:142.31 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc Silicon NPN Power Transistor

文件:216.2 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc Silicon NPN Power Transistor

文件:216.21 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc Silicon NPN Power Transistor

文件:216.21 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MJ3产品属性

  • 类型

    描述

  • 型号

    MJ3

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3

更新时间:2024-4-30 12:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
23+
TO-3
120000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
CHINA
22+
TO-3
640
航宇科工半导体-央企合格优秀供方!
MOT
21+
TO-3
195
优势代理渠道,原装正品,可全系列订货开增值税票
MOT
23+
TO-3
8560
受权代理!全新原装现货特价热卖!
23+
N/A
90350
正品授权货源可靠
MOT
21+
TO-3
12588
原装现货价格优势
MOT/ON
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
MOT
2020+
TO-3
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
东芝
100
原装现货,价格优惠
MOT
22+
TO-3
32350
深圳存库原装现货

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