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MJ3晶体管资料
MJ3000别名:MJ3000三极管、MJ3000晶体管、MJ3000晶体三极管
MJ3000生产厂家:美国摩托罗拉半导体公司
MJ3000制作材料:Si-N+Darl+Di
MJ3000性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
MJ3000封装形式:直插封装
MJ3000极限工作电压:60V
MJ3000最大电流允许值:10A
MJ3000最大工作频率:<1MHZ或未知
MJ3000引脚数:2
MJ3000最大耗散功率:150W
MJ3000放大倍数:β>1000
MJ3000图片代号:E-44
MJ3000vtest:60
MJ3000htest:999900
- MJ3000atest:10
MJ3000wtest:150
MJ3000代换 MJ3000用什么型号代替:BDW83A...D,BDX65A...C,BDX67,FH9C,MJ4033,2N6057,2N6058,2N6059,
MJ3价格
参考价格:¥0.8982
型号:MJ32 品牌:Apem 备注:这里有MJ3多少钱,2024年最近7天走势,今日出价,今日竞价,MJ3批发/采购报价,MJ3行情走势销售排行榜,MJ3报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | MotorolaMotorola, Inc 摩托罗拉 | |||
Power Transistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARY POWER DARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | |||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | SAVANTIC Savantic, Inc. | |||
Silicon complementary trasistors power darlington PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Medium-Power Complementary Silicon Transistors Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARY POWER DARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | |||
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | MotorolaMotorola, Inc 摩托罗拉 | |||
DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain— hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Power Transistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
COMPLEMENTARY POWER DARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | |||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJ2501isaSiliconEpitaxial-BasePNPpowertransistorsinmonolithicDarlingtonconfiguration,mountedinJedecTO-3metacase.Itisintentedforuseinpowerlinearandswitchingapplications. ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
10 Ampere Darlington Power Transistors Complementary Silicon [multicomp] Features: •Medium-powercomplementarySiliconTransistorsforuseasoutputdevicesin complementarygeneralpurposeamplifierapplications. •HighDCCurrentGain hFE=1000(Typical)atIC=5.0A. •MonolithicconstructionwithbuiltBase-EmitterShuntResistors. | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
Medium-Power Complementary Silicon Transistors Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARY POWER DARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | |||
Silicon complementary trasistors power darlington PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Silicon NPN Power Transistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | SAVANTIC Savantic, Inc. | |||
DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON HIGHVOLTAGESILICONPOWERDARLINGTON DARLINGTON10AMPEREDARLINGTONNPNSILICONPOWERTRANSISTORS300,350VOLTS275WATTS ...delvelopedforlineoperatedamplifier,seriespassandswitchingregulatorapplications. | MotorolaMotorola, Inc 摩托罗拉 | |||
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE=100(Min)@IC=2.5A ·Collector-EmitterSustainingVoltageVCEO(SUS)=300V(Min) APPLICATIONS ·Developedforlineoperatedamplifier,seriespassandSwitchingregulatorapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON HIGHVOLTAGESILICONPOWERDARLINGTON DARLINGTON10AMPEREDARLINGTONNPNSILICONPOWERTRANSISTORS300,350VOLTS275WATTS ...delvelopedforlineoperatedamplifier,seriespassandswitchingregulatorapplications. | MotorolaMotorola, Inc 摩托罗拉 | |||
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION •Built-inBase-EmitterShuntResistors •HighDCcurrentgainhFE=250(Min)@IC=2.5A •Collector-EmitterSustainingVoltageVCEO(SUS)=300V(Min) APPLICATIONS •Developedforlineoperatedamplifier,seriespassandSwitchingregulatorapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE=250(Min)@IC=2.5A ·Collector-EmitterSustainingVoltageVCEO(SUS)=350V(Min) APPLICATIONS ·Developedforlineoperatedamplifier,seriespassandSwitchingregulatorapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON HIGHVOLTAGESILICONPOWERDARLINGTON DARLINGTON10AMPEREDARLINGTONNPNSILICONPOWERTRANSISTORS300,350VOLTS275WATTS ...delvelopedforlineoperatedamplifier,seriespassandswitchingregulatorapplications. | MotorolaMotorola, Inc 摩托罗拉 | |||
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS ComplementaryNPN-PNPSiliconPowerBipolarTransistor TheMJ3281AandMJ1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •GainComplementary: —GainLinearityfrom100mAto7A —Hi | MotorolaMotorola, Inc 摩托罗拉 | |||
Silicon NPN Power Transistors 文件:119.97 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
Bipolar NPN Device in a Hermetically sealed TO3 文件:16.329 Kbytes Page:1 Pages | SEME-LAB Seme LAB | |||
Silicon NPN Power Transistors 文件:119.97 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件:51.79 Kbytes Page:4 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
包装:卷带(TR) 描述:RESISTOR AXIAL 电阻器 通孔式电阻器 | OHMITE OHMITE MANUFACTURING COMPANY | |||
封装/外壳:轴向 包装:卷带(TR) 描述:RES 301 OHM 1% 1/8W AXIAL 电阻器 通孔式电阻器 | OHMITE OHMITE MANUFACTURING COMPANY | |||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件:14.38 Kbytes Page:1 Pages | SEME-LAB Seme LAB | |||
isc Silicon NPN Power Transistor 文件:144.41 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 文件:10.94 Kbytes Page:1 Pages | SEME-LAB Seme LAB | |||
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 文件:11.93 Kbytes Page:1 Pages | SEME-LAB Seme LAB | |||
Bipolar PNP Device in a Hermetically sealed TO66 文件:16.11 Kbytes Page:1 Pages | SEME-LAB Seme LAB | |||
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 文件:11.07 Kbytes Page:1 Pages | SEME-LAB Seme LAB | |||
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR 文件:221.68 Kbytes Page:6 Pages | MotorolaMotorola, Inc 摩托罗拉 | |||
1 cell lithium?밿on/lithium?뱎olymer battery protection IC 文件:233.31 Kbytes Page:3 Pages | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | |||
1 cell lithium?밿on/lithium?뱎olymer battery protection IC 文件:233.31 Kbytes Page:3 Pages | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | |||
1 cell lithium?밿on/lithium?뱎olymer battery protection IC 文件:233.31 Kbytes Page:3 Pages | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | |||
1 cell lithium?밿on/lithium?뱎olymer battery protection IC 文件:233.31 Kbytes Page:3 Pages | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | |||
1 cell lithium?밿on/lithium?뱎olymer battery protection IC 文件:233.31 Kbytes Page:3 Pages | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | |||
1 cell lithium?밿on/lithium?뱎olymer battery protection IC 文件:233.31 Kbytes Page:3 Pages | MITSUMIMITSUMI ELECTRIC CO.,LTD. 美上美三美电机株式会社 | |||
Magnetic field sensor 文件:226.32 Kbytes Page:2 Pages | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福(北京)过程自动化倍加福(北京)过程自动化控制设备有限公司 | |||
Magnetic field sensor 文件:207.5 Kbytes Page:2 Pages | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福(北京)过程自动化倍加福(北京)过程自动化控制设备有限公司 | |||
isc Silicon NPN Power Transistor 文件:142.31 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc Silicon NPN Power Transistor 文件:216.2 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc Silicon NPN Power Transistor 文件:216.21 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc Silicon NPN Power Transistor 文件:216.21 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
MJ3产品属性
- 类型
描述
- 型号
MJ3
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
23+ |
TO-3 |
120000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
CHINA |
22+ |
TO-3 |
640 |
航宇科工半导体-央企合格优秀供方! |
|||
MOT |
21+ |
TO-3 |
195 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOT |
23+ |
TO-3 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
23+ |
N/A |
90350 |
正品授权货源可靠 |
||||
MOT |
21+ |
TO-3 |
12588 |
原装现货价格优势 |
|||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
2020+ |
TO-3 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
东芝 |
100 |
原装现货,价格优惠 |
|||||
MOT |
22+ |
TO-3 |
32350 |
深圳存库原装现货 |
MJ3规格书下载地址
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