10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • DARLINGTON • High DC current gain • Complement to type MJ2500/2501 APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

Power Transistors

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

Bipolar Junction Transistors

Bipolar NPN Device in a Hermetically sealed TO3

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Silicon NPN Power Transistors

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Light Emitting Diode Miniature, Clear Red

Description: The NTE3000 is a high efficiency red source color device made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode in a two lead epoxy package with a clear lens. The NTE3000 is intended for high volume indicator light applications. Major usage is in applic

Silicon planar type

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