N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

COMPOUND FIELD EFFECT POWER TRANSISTOR

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The mPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance ID(DC) = ±3 A R

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

DESCRIPTION\nThe µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for\nsolenoid, motor and lamp driver.FEATURES\n• 4 V driving is possible\n• Large Current and Low On-state Resistance\n  ID(DC)= ±3 A\n  RDS(on)1 ≤0.18 ΩMAX. (VGS= 10 V, ID= 2 A)\n  RDS(on • 4 V driving is possible\n• Large Current and Low On-state Resistance\n  ID(DC)= ±3 A\n  RDS(on)1 ≤0.18 ΩMAX. (VGS= 10 V, ID= 2 A)\n  RDS(on)2 ≤0.24 ΩMAX. (VGS= 4 V, ID= 2 A)\n• Low Input Capacitance Ciss = 200 pF TYP.\n• Surge Absorber, built in;

COMPOUND FIELD EFFECT POWER TRANSISTOR

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The mPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance ID(DC) = ±3 A R

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

Integrated Circuit 7-Step LED Driver Circuit

Description: The NTE1500 and NTE1501 are integrated circuits designed for driving 7–dot LED displays. The NTE1500 responds logarithmically to the input signal while the NTE1501 responds linearly. Because an adjustment pin for output current is provided, the brightness of the LED can be controll