功能：能量收集 包装：散装 描述：PELTIER CLICK 开发板，套件，编程器 评估板 - 扩展板，子卡

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

20V N-Channel MOSFET

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High- performance 5.1ch electronic volume

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