FOM Management IC with Internal Calibration

文件：1.36867 Mbytes Page：76 Pages

封装/外壳：24-VFQFN 裸露焊盘，24-MLF® 包装：卷带（TR） 描述：IC TRANSCEIVER W/ CALIBR 24MLF 集成电路（IC） 驱动器，接收器，收发器

FOM Management IC with Internal Calibration

文件：1.36867 Mbytes Page：76 Pages

封装/外壳：24-VFQFN 裸露焊盘，24-MLF® 包装：管件 描述：IC TRANSCEIVER FOM MGMT 24MLF 集成电路（IC） 驱动器，接收器，收发器

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

文件：517.74 Kbytes Page：22 Pages