TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

文件：579.62 Kbytes Page：10 Pages

SUPER LOW MOISE InGaAs HEMT

文件：198.33 Kbytes Page：4 Pages

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 9.3 A (VGS = 10V) ● RDS(ON)

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous