Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

丝印代码：4918；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 9.3 A (VGS = 10V) ● RDS(ON)

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE REGULATORS PLUS FILTER

DESCRIPTION The L4918 combines both a filter and a voltage regulator in order to provide a high ripple rejection over a wider input voltage range. A supervisor low-pass loop of the element prevents the output transistor from saturation at low input voltages. The non linear behaviour of this con

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

SMPS - IC with SIPMOS Driver Output

Functional Description The versatile switch-mode power supply ICs for the direct control of SIPMOS power transistors comprise digital and analog functions. These functions are required for the design of high-quality flyback and forward converters during single-phase and push-pull operation in nor

SMPS - IC with SIPMOS Driver Output

Functional Description The versatile switch-mode power supply ICs for the direct control of SIPMOS power transistors comprise digital and analog functions. These functions are required for the design of high-quality flyback and forward converters during single-phase and push-pull operation in nor

Stereo Audio Amp with AGC Control

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