Film Resistors

Film Resistors Resistances from 50kOhm to 2GOhms Power Rating to 3Watts Resistance Tolerances to ±0.5 Max. working voltage to 10000V Convenient RN Type Package Styles

Film Resistors

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N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications ● Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) ● The electrodes are isolated from case. ● Low thermal resistance ● VCE (sat) = 2.1 V (typ.)

Dual IGBTMOD

Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge confi guration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and inter

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILIOCN N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

High Power Switching Applications Motor Control Applications ● High input impedance ● High speed : tf = 0.3µs (Max) @Inductive load ● Low saturation voltage : VCE (sat) = 3.6V (Max) ● Enhancement-mode ● Includes a complete half bridge in onepackage. ● The electrodes are isolated from case.

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications ● High input impedance ● High speed: tf = 0.3 µs (max) Inductive load ● Low saturation voltage: VCE (sat) = 2.6 V (max) ● The electrodes are isolated from case. ● Enhancement-mode

High-Power Module Silicon Carbide N-Channel MOSFET

Applications • High-Power Switching • Motor Controllers (including rail traction) Features (1) VDSS = 1200 V, ID = 600 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in temperature sensor. (3) Enhancement

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS MOTOR CONTROL APPLICATIONS ● The Electrodes are Isolated from Case. ● Enhancement−Mode ● Thermal Output Terminal (TH)

Compact IGBT

Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and inter

IGBT模块

TOSHIBA IGBT Module Silicon N Channel IGBT

封装/外壳：模块 包装：盒 描述：IGBT MOD 600V 600A 2770W 分立半导体产品 晶体管 - IGBT - 模块

High Power Switching Applications Motor Control Applications

High Power Switching Applications Motor Control Applications

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HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

文件：123.69 Kbytes Page：7 Pages

封装/外壳：模块 包装：盒 描述：IGBT MOD 1200V 600A 4300W 分立半导体产品 晶体管 - IGBT - 模块

High Power Switching Applications Motor Control Applications

文件：139.95 Kbytes Page：9 Pages

Compact, 6W 4:1 Input, MiniDIP DC/DC Con vert ers

文件：462.82 Kbytes Page：2 Pages