MF-R Series - PTC Resettable Fuses

Features ■ Radial Leaded Devices ■ Cured, flame retardant epoxy polymer insulating material meets UL 94V-0 requirements ■ RoHS compliant* and halogen free** ■ Agency recognition: Additional Features ■ Bulk packaging, tape and reel and Ammo-Pak available on most models Applications Almost a

MF-R Series - PTC Resettable Fuses

Features n Radial Leaded Devices n Cured, flame retardant epoxy polymer insulating material meets UL 94V-0 requirements n RoHS compliant* and halogen free** n Agency recognition:

封装/外壳：径向，圆片式 包装：散装 描述：PTC RESET FUSE 30V 8A RADIAL 电路保护 PTC 可复位保险丝

PTC Resettable Fuses

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PTC Resettable Fuses

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PTC Resettable Fuses

文件：210.18 Kbytes Page：6 Pages

Almost anywhere there is a low voltage power supply and a load to be protected, including

文件：210.18 Kbytes Page：6 Pages

Almost anywhere there is a low voltage power supply and a load to be protected, including

文件：210.18 Kbytes Page：6 Pages

MF-R Series - PTC Resettable Fuses

文件：210.18 Kbytes Page：6 Pages

PTC Resettable Fuses

文件：710.75 Kbytes Page：6 Pages

自恢复保险丝

封装/外壳：径向，圆片式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PTC RESET FUSE 30V 8A RADIAL 电路保护 PTC 可复位保险丝

自恢复保险丝

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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