High voltage NPN Power transistor for standard definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

封装/外壳：TO-3P-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 700V 10A TO3PF 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage NPN Power transistor for standard definition CRT display

High voltage NPN Power transistor for standard Definition CRT display

Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. General features ■ State-of-the-a

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4400 V Mean forward current 1560 A Surge current 18.5 kA

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

10 10W STEREO AMPLIFIER

DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. ■ HIGH OUTPUT POWER (10 + 10W Min. @ D = 1) ■ HIGH CURRENT CAPABILITY (UP TO 3.5A) ■ AC SHORT CIRCUIT PRO