NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages

Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal)

文件：93.36 Kbytes Page：8 Pages